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STS11NF30L
+物料清單MOSFET N-CH 30V 11A 8SO
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製造商意法半導體
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製造商部分 #STS11NF30L
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規格
| 屬性 | 價值 |
| Series | STripFET™ II |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 5V, 10V |
| RdsOn(Max)@Id,Vgs | 10.5mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 5 V |
| Vgs(Max) | ±18V |
| InputCapacitance(Ciss)(Max)@Vds | 1440 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| BaseProductNumber | STS11 |
概述
Description
Key characteristics include a low on-resistance (R_DS(on)), which reduces power loss and heat generation during operation, and a fast switching speed, making it suitable for high-frequency applications. It is housed in a TO-220 package, which facilitates easy heat dissipation. The STS11NF30L is an ideal choice for engineers looking for reliable performance in demanding environments, including industrial and consumer electronics.
For optimal performance, attention to thermal management and proper gate drive circuitry is essential.
Equivalent
Features
1. Voltage Rating: Maximum drain-source voltage (VDS) of 300V, suitable for high-voltage circuits.
2. Current Capability: Continuous drain current (ID) of up to 11A, allowing it to handle significant loads.
3. Low On-Resistance: RDS(on) of about 0.11Ω at 10V gate-source voltage, ensuring efficient operation with minimal power loss.
4. Fast Switching: Capable of rapid switching speeds, making it ideal for applications like power supplies and motor control.
5. Thermal Performance: High thermal stability with a maximum junction temperature of 150°C, enhancing reliability in various environments.
6. TO-220 Package: Available in a TO-220 package, providing ease of mounting and good thermal dissipation.
These features make the STS11NF30L suitable for applications in power electronics, including DC-DC converters, inverters, and other high-power switching devices.
Pinout
1. Gate (G): Pin 1 - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): Pin 2 - This pin is where the current enters the MOSFET. It connects to the load.
3. Source (S): Pin 3 - This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching applications.
The STS11NF30L is designed for high-voltage applications, capable of handling a maximum drain-source voltage (Vds) of 300V and a continuous drain current (Id) of up to 11A. Its low on-resistance (Rds(on)) ensures efficient performance in switching applications.
Manufacturer
Founded in 1987, STMicroelectronics is headquartered in Geneva, Switzerland, and operates research and development facilities, manufacturing sites, and sales offices worldwide. The company is known for its commitment to innovation, quality, and sustainability in the semiconductor industry. They focus on developing technologies that support the growing demand for energy efficiency, connectivity, and smart applications in the evolving digital landscape.
Application
1. Power Supply Circuits: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Employed in DC motor drivers and control systems for speed and direction management.
3. Load Switching: Ideal for switching loads in power management applications.
4. Lighting Control: Utilized in LED drivers and dimming circuits.
5. Inverters: Applied in renewable energy systems, such as solar inverters.
Its low on-resistance helps enhance efficiency in these applications.