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STP6NK90Z
+物料清單MOSFET N-CH 900V 5.8A TO220AB
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製造商意法半導體
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製造商部分 #STP6NK90Z
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規格
| 屬性 | 價值 |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 5.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 60.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1350 pF @ 25 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概述
Description
Key specifications of the STP6NK90Z include a drain-source voltage (V_DS) of 900V, a continuous drain current (I_D) of 5.8A at 25°C, and a low on-resistance (R_DS(on)) of 1.2 ohms, which contributes to reduced conduction losses. It features fast switching times, enhancing overall efficiency in power conversion applications. The device is housed in a TO-220 package, which provides good thermal performance and ease of mounting.
Overall, the STP6NK90Z offers reliable performance in high-voltage applications, combining robustness with efficient high-frequency operation. It is a popular choice for designers looking to optimize the performance and energy efficiency of power electronic systems.
Equivalent
1. IRF9Z34 (International Rectifier)
2. IXFH5N90 (IXYS)
3. FDPF5N90NZ (ON Semiconductor)
4. NTP6N90 (ON Semiconductor)
Note that while these components may have similar specifications, always verify the exact parameters such as voltage, current ratings, and package compatibility to ensure they meet your specific requirements.
Features
1. N-channel MOSFET: It is designed for use in high-efficiency switching applications.
2. Voltage Rating: The device has a drain-source voltage (V_DS) rating of 900V, making it suitable for high-voltage applications.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 5.8A.
4. Low On-Resistance: The MOSFET offers a low R_DS(on) which helps in reducing conduction losses.
5. Fast Switching: It supports fast switching speeds, which improves efficiency in power conversion applications.
6. Zener-Protected: It includes a Zener diode for ESD protection, enhancing its robustness.
7. Package: Typically available in a TO-220 package, providing good thermal performance.
8. Applications: Suitable for use in lighting, power supply, and various industrial applications where high voltage and efficiency are required.
These features make the STP6NK90Z a versatile choice for designers working on high-voltage applications.
Pinout
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate determines whether the MOSFET is in an on (conducting) or off (non-conducting) state.
2. Drain (D): The drain is the terminal through which the main current flows in when the MOSFET is in the on state. It connects to the load in the circuit.
3. Source (S): This is the terminal through which the main current flows out. It is typically connected to ground or the negative side of the power supply in N-channel configurations.
The STP6NK90Z is designed for high-voltage applications, with a drain-source voltage (V_ds) of up to 900V, and is used in applications such as power supplies and converters.
Manufacturer
Application
1. Switched-Mode Power Supplies (SMPS): Utilized for efficiently converting electrical power.
2. Motor Control: Suitable for driving motors in industrial and consumer applications.
3. Lighting Systems: Used in LED drivers and other lighting control circuits.
4. Power Management: Applied in battery management systems and voltage regulation.
5. Inverter Circuits: Employed in renewable energy systems like solar inverters.
Its high voltage and current capabilities make it ideal for these applications, providing efficient switching and power handling.