規格
| 屬性 | 價值 |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.2Ohm @ 3A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 905 pF @ 25 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
概述
Description
The STP6NK60ZFP is an N-channel 600V, 5.6A power MOSFET from STMicroelectronics, designed for high-efficiency switching applications. It features low gate charge (QG) and low on-resistance (RDS(on)), making it suitable for power supplies, motor drives, and lighting systems.
Key specifications:
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 5.6A
- RDS(on) (max): 1.2Ω @ 10V VGS
- Fast switching with low gate drive requirements
- Avalanche ruggedness for reliability
Packaged in TO-220FP (isolated tab), it offers thermal efficiency and electrical isolation. Ideal for SMPS, inverters, and industrial controls where high voltage and efficiency are critical.
For detailed performance curves and application notes, refer to the STMicroelectronics datasheet.
Key specifications:
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 5.6A
- RDS(on) (max): 1.2Ω @ 10V VGS
- Fast switching with low gate drive requirements
- Avalanche ruggedness for reliability
Packaged in TO-220FP (isolated tab), it offers thermal efficiency and electrical isolation. Ideal for SMPS, inverters, and industrial controls where high voltage and efficiency are critical.
For detailed performance curves and application notes, refer to the STMicroelectronics datasheet.
Equivalent
Equivalent products to the STP6NK60ZFP (600V, 5.6A, N-channel MOSFET) include:
- IRF840 (500V, 8A)
- FQP6N60C (600V, 6A)
- STP6NK60Z (600V, 5.6A, similar specs)
- 2SK3562 (600V, 6A)
- IRFB9N60A (600V, 9A)
Check datasheets for exact compatibility in your circuit.
- IRF840 (500V, 8A)
- FQP6N60C (600V, 6A)
- STP6NK60Z (600V, 5.6A, similar specs)
- 2SK3562 (600V, 6A)
- IRFB9N60A (600V, 9A)
Check datasheets for exact compatibility in your circuit.
Features
The STP6NK60ZFP is a 600V, 5.6A N-channel MOSFET with key features:
- Low On-Resistance (RDS(on)): 1.2Ω (typ.) at 10V VGS, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency power applications.
- Avalanche Rugged: High energy capability for reliability in harsh conditions.
- Low Gate Charge (Qg): Enhances switching performance.
- Low Input Capacitance (Ciss): Improves high-frequency operation.
- TO-220FP (Insulated) Package: Provides electrical isolation for easier mounting.
- Applications: SMPS, lighting, motor control, and industrial systems.
Its high voltage rating and low power dissipation make it suitable for energy-efficient designs.
- Low On-Resistance (RDS(on)): 1.2Ω (typ.) at 10V VGS, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency power applications.
- Avalanche Rugged: High energy capability for reliability in harsh conditions.
- Low Gate Charge (Qg): Enhances switching performance.
- Low Input Capacitance (Ciss): Improves high-frequency operation.
- TO-220FP (Insulated) Package: Provides electrical isolation for easier mounting.
- Applications: SMPS, lighting, motor control, and industrial systems.
Its high voltage rating and low power dissipation make it suitable for energy-efficient designs.
Pinout
The STP6NK60ZFP is a 600V, 5.6A N-channel MOSFET in a TO-220FP package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Connected to ground/common return.
Key features:
- Low gate charge for efficient switching.
- Avalanche rugged for reliability in inductive loads.
- Zener-protected gate for enhanced ESD protection.
Commonly used in power supplies, motor control, and lighting applications.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Connected to ground/common return.
Key features:
- Low gate charge for efficient switching.
- Avalanche rugged for reliability in inductive loads.
- Zener-protected gate for enhanced ESD protection.
Commonly used in power supplies, motor control, and lighting applications.
Package
The STP6NK60ZFP is a N-channel MOSFET in a TO-220FP (TO-220 Full Pack) package. This package features a fully molded plastic body with a flat, insulated surface, eliminating the need for an additional insulating pad. It has three leads and is designed for through-hole mounting, offering good thermal performance and electrical isolation.
