規格
| 屬性 | 價值 |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 165mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1800 pF @ 50 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
概述
Description
The STP26NM60N is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency switching applications.
### Key Features:
- Voltage Rating: 600V
- Current Rating: 26A (continuous)
- Low On-Resistance (RDS(on)): 0.19Ω (max)
- Fast Switching: Optimized for high-speed operation
- Avalanche Rugged: Enhanced reliability under high-energy conditions
### Applications:
- Switch-mode power supplies (SMPS)
- Motor drives
- Lighting systems
- Industrial inverters
### Package:
- TO-220FP (isolated tab for better thermal management)
This MOSFET is ideal for high-voltage, high-current applications requiring efficient power handling and fast switching.
### Key Features:
- Voltage Rating: 600V
- Current Rating: 26A (continuous)
- Low On-Resistance (RDS(on)): 0.19Ω (max)
- Fast Switching: Optimized for high-speed operation
- Avalanche Rugged: Enhanced reliability under high-energy conditions
### Applications:
- Switch-mode power supplies (SMPS)
- Motor drives
- Lighting systems
- Industrial inverters
### Package:
- TO-220FP (isolated tab for better thermal management)
This MOSFET is ideal for high-voltage, high-current applications requiring efficient power handling and fast switching.
Equivalent
Equivalent products to the STP26NM60N (600V, 26A, N-channel MOSFET) include:
- IRFP26N60K (Infineon)
- FQP27N60 (Fairchild/ON Semi)
- IXFH26N60 (IXYS)
- STW26NM60N (STMicroelectronics, TO-247 package)
These alternatives offer similar voltage, current, and RDS(on) specifications. Always verify datasheets for exact compatibility.
- IRFP26N60K (Infineon)
- FQP27N60 (Fairchild/ON Semi)
- IXFH26N60 (IXYS)
- STW26NM60N (STMicroelectronics, TO-247 package)
These alternatives offer similar voltage, current, and RDS(on) specifications. Always verify datasheets for exact compatibility.
Features
The STP26NM60N is an N-channel MOSFET with the following key features:
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Rating: 26A continuous drain current (ID).
- Low On-Resistance: 0.19Ω (max) at 10V gate drive (RDS(on)).
- Fast Switching: Optimized for high-speed applications.
- Avalanche Rugged: High energy capability for reliability.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- TO-220 Package: Easy mounting and heat dissipation.
Ideal for switched-mode power supplies (SMPS), motor control, and inverters.
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Rating: 26A continuous drain current (ID).
- Low On-Resistance: 0.19Ω (max) at 10V gate drive (RDS(on)).
- Fast Switching: Optimized for high-speed applications.
- Avalanche Rugged: High energy capability for reliability.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- TO-220 Package: Easy mounting and heat dissipation.
Ideal for switched-mode power supplies (SMPS), motor control, and inverters.
Pinout
The STP26NM60N is a N-channel MOSFET with 3 pins and the following functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key specifications:
- 600V drain-source voltage (VDS)
- 26A continuous drain current (ID)
- Low on-resistance (RDS(on) = 0.19Ω max)
- Suitable for switching power supplies, motor control, and inverters.
Package: TO-220 (through-hole mounting).
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key specifications:
- 600V drain-source voltage (VDS)
- 26A continuous drain current (ID)
- Low on-resistance (RDS(on) = 0.19Ω max)
- Suitable for switching power supplies, motor control, and inverters.
Package: TO-220 (through-hole mounting).
Application
The STP26NM60N (a 600V, 26A N-channel MOSFET) is commonly used in:
1. Switching Power Supplies – Efficient power conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives for brushed/brushless motors in appliances and industrial systems.
3. Lighting – High-voltage LED drivers and ballasts.
4. Inverters – Solar inverters and UPS systems for energy conversion.
5. Industrial Automation – Relays and solenoid drivers.
Its low on-resistance (RDS(on)) and fast switching make it ideal for high-efficiency, high-power applications.
1. Switching Power Supplies – Efficient power conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives for brushed/brushless motors in appliances and industrial systems.
3. Lighting – High-voltage LED drivers and ballasts.
4. Inverters – Solar inverters and UPS systems for energy conversion.
5. Industrial Automation – Relays and solenoid drivers.
Its low on-resistance (RDS(on)) and fast switching make it ideal for high-efficiency, high-power applications.
Package
The STP26NM60N is a N-channel MOSFET housed in a TO-220 package. This through-hole package is widely used for power applications due to its robust thermal and electrical performance. It features three pins (Gate, Drain, Source) and is suitable for high-voltage, high-current switching, such as in power supplies or motor control. The TO-220 package allows for easy mounting with a heatsink for better heat dissipation.
