規格
| 屬性 | 價值 |
| Package | Tube |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 650 V |
| Current-Collector(Ic)(Max) | 120 A |
| Current-CollectorPulsed(Icm) | 240 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 80A |
| Power-Max | 469 W |
| SwitchingEnergy | 2.1mJ (on), 1.5mJ (off) |
| InputType | Standard |
| GateCharge | 414 nC |
| Td(on/off)@25°C | 84ns/280ns |
| TestCondition | 400V, 80A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 85 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
概述
Description
The designation "STGWT80H65DFB" likely refers to a specific type of semiconductor device, most probably a power transistor or a thyristor, manufactured by STMicroelectronics or a similar company. STMicroelectronics is known for producing a wide range of electronic components used in power management and control applications.
Breaking down the designation:
- "ST" generally stands for STMicroelectronics.
- "GWT" might denote a specific series or product line within their semiconductor offerings.
- "80H65" could indicate the device's specifications, such as its voltage and current ratings (e.g., 800V and 65A).
- "DFB" could refer to packaging type or additional features like low forward voltage drop.
Such devices are used in high-power applications, including motor drives, power converters, industrial machines, and energy-efficient power supplies. They are valued for their ability to handle high voltages and currents with efficiency and reliability. To know the exact specifications and applications, referring to the datasheet from the manufacturer is recommended.
Breaking down the designation:
- "ST" generally stands for STMicroelectronics.
- "GWT" might denote a specific series or product line within their semiconductor offerings.
- "80H65" could indicate the device's specifications, such as its voltage and current ratings (e.g., 800V and 65A).
- "DFB" could refer to packaging type or additional features like low forward voltage drop.
Such devices are used in high-power applications, including motor drives, power converters, industrial machines, and energy-efficient power supplies. They are valued for their ability to handle high voltages and currents with efficiency and reliability. To know the exact specifications and applications, referring to the datasheet from the manufacturer is recommended.
Equivalent
The STGWT80H65DFB is an advanced IGBT chip by STMicroelectronics. Equivalent products may include:
1. Infineon: IKW40T65 or IKQ75N65ET6
2. ON Semiconductor: FGH75T65UPD
3. Fairchild (now ON Semiconductor): FGH60T65SQD
4. Mitsubishi: CM75DY-24NFH
5. Fuji Electric: 6MBI75S-120
These equivalents may vary depending on specific application requirements, such as voltage, current ratings, and packaging type. Always verify specifications for compatibility.
1. Infineon: IKW40T65 or IKQ75N65ET6
2. ON Semiconductor: FGH75T65UPD
3. Fairchild (now ON Semiconductor): FGH60T65SQD
4. Mitsubishi: CM75DY-24NFH
5. Fuji Electric: 6MBI75S-120
These equivalents may vary depending on specific application requirements, such as voltage, current ratings, and packaging type. Always verify specifications for compatibility.
Features
The STGWT80H65DFB is a silicon carbide (SiC) power MOSFET designed for high-efficiency and high-frequency applications. Key features include:
1. High Voltage and Current Capacity: It typically supports a high voltage rating and current handling, making it suitable for demanding applications.
2. SiC Technology: Utilizes silicon carbide technology, offering better performance than traditional silicon MOSFETs, particularly in terms of efficiency and thermal management.
3. Low On-Resistance: Offers low on-resistance (R_ds(on)), reducing conduction losses and improving overall efficiency.
4. Fast Switching: Capable of fast switching speeds, which reduces switching losses and is beneficial for high-frequency applications.
5. Thermal Performance: Improved thermal conductivity compared to silicon-based devices, allowing for better heat dissipation and reliability.
6. Robustness: Enhanced robustness and reliability under high-temperature and high-stress conditions.
These features make the STGWT80H65DFB suitable for applications such as power converters, motor drives, and inverters where efficiency and high performance are critical.
1. High Voltage and Current Capacity: It typically supports a high voltage rating and current handling, making it suitable for demanding applications.
2. SiC Technology: Utilizes silicon carbide technology, offering better performance than traditional silicon MOSFETs, particularly in terms of efficiency and thermal management.
3. Low On-Resistance: Offers low on-resistance (R_ds(on)), reducing conduction losses and improving overall efficiency.
4. Fast Switching: Capable of fast switching speeds, which reduces switching losses and is beneficial for high-frequency applications.
5. Thermal Performance: Improved thermal conductivity compared to silicon-based devices, allowing for better heat dissipation and reliability.
6. Robustness: Enhanced robustness and reliability under high-temperature and high-stress conditions.
These features make the STGWT80H65DFB suitable for applications such as power converters, motor drives, and inverters where efficiency and high performance are critical.
Pinout
The STGWT80H65DFB is an Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It typically comes in a TO-247 long-lead package. The package generally has three pins, each with the following functions:
1. Collector (C): This pin is where the main current enters the IGBT. It is connected to the positive side of the high power supply in most applications.
2. Gate (G): This pin is used to control the IGBT. By applying the appropriate voltage to the gate, the flow of current between the collector and emitter can be controlled, effectively turning the device on or off.
3. Emitter (E): This is the pin where the main current exits the IGBT. It is typically connected to the load or the return path to the power supply.
The STGWT80H65DFB is designed for high-efficiency, fast-switching applications, such as inverters and motor drives, due to its low on-state voltage drop and high-speed switching capability.
1. Collector (C): This pin is where the main current enters the IGBT. It is connected to the positive side of the high power supply in most applications.
2. Gate (G): This pin is used to control the IGBT. By applying the appropriate voltage to the gate, the flow of current between the collector and emitter can be controlled, effectively turning the device on or off.
3. Emitter (E): This is the pin where the main current exits the IGBT. It is typically connected to the load or the return path to the power supply.
The STGWT80H65DFB is designed for high-efficiency, fast-switching applications, such as inverters and motor drives, due to its low on-state voltage drop and high-speed switching capability.
Manufacturer
The STGWT80H65DFB is a power semiconductor module manufactured by STMicroelectronics (ST), a global leader in semiconductor solutions.
STMicroelectronics is a Swiss-Italian multinational company specializing in advanced electronics, including microcontrollers, sensors, and power devices. Known for innovation in automotive, industrial, and IoT applications, ST is a key player in energy-efficient and high-performance semiconductor technologies.
The STGWT80H65DFB is part of ST’s IGBT (Insulated Gate Bipolar Transistor) portfolio, designed for high-power switching applications like motor drives and renewable energy systems.
STMicroelectronics is a Swiss-Italian multinational company specializing in advanced electronics, including microcontrollers, sensors, and power devices. Known for innovation in automotive, industrial, and IoT applications, ST is a key player in energy-efficient and high-performance semiconductor technologies.
The STGWT80H65DFB is part of ST’s IGBT (Insulated Gate Bipolar Transistor) portfolio, designed for high-power switching applications like motor drives and renewable energy systems.
Application
The STGWT80H65DFB is a high-power IGBT module designed for demanding applications, including:
- Industrial Motor Drives: Used in AC motor control for machinery and automation.
- Renewable Energy: Inverters for solar and wind power systems.
- Electric Vehicles (EVs): Power conversion in traction inverters and charging stations.
- Uninterruptible Power Supplies (UPS): Ensures reliable energy backup.
- Welding Equipment: Provides efficient power control in industrial welding.
Its high efficiency, robustness, and thermal performance make it suitable for high-voltage, high-current environments.
- Industrial Motor Drives: Used in AC motor control for machinery and automation.
- Renewable Energy: Inverters for solar and wind power systems.
- Electric Vehicles (EVs): Power conversion in traction inverters and charging stations.
- Uninterruptible Power Supplies (UPS): Ensures reliable energy backup.
- Welding Equipment: Provides efficient power control in industrial welding.
Its high efficiency, robustness, and thermal performance make it suitable for high-voltage, high-current environments.
Package
The STGWT80H65DFB is an insulated-gate bipolar transistor (IGBT) typically used in power electronics. The package type for this IGBT is D2PAK (also known as TO-263), a surface-mount package that provides efficient thermal performance and ease of mounting on PCBs.
