規格
| 屬性 | 價值 |
| Package | Tube |
| Series | PowerMESH™ |
| ProductStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 60 A |
| Current-CollectorPulsed(Icm) | 150 A |
| Vce(on)(Max)@VgeIc | 2.5V @ 15V, 20A |
| Power-Max | 200 W |
| SwitchingEnergy | 220µJ (on), 330µJ (off) |
| InputType | Standard |
| GateCharge | 100 nC |
| Td(on/off)@25°C | 31ns/100ns |
| TestCondition | 390V, 20A, 3.3Ohm, 15V |
| ReverseRecoveryTime(trr) | 44 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
概述
Description
The STGW20NC60VD is a 600V, 20A IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high-efficiency power switching applications. Key features include:
- Low VCE(sat) (1.85V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, suitable for PWM (Pulse Width Modulation) applications.
- Robust design with built-in freewheeling diode for inductive load protection.
- High temperature operation (up to 150°C).
Commonly used in motor drives, inverters, UPS systems, and industrial power converters, it offers a balance of efficiency and reliability. The TO-247 package ensures good thermal performance.
For detailed specs, refer to the datasheet.
- Low VCE(sat) (1.85V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, suitable for PWM (Pulse Width Modulation) applications.
- Robust design with built-in freewheeling diode for inductive load protection.
- High temperature operation (up to 150°C).
Commonly used in motor drives, inverters, UPS systems, and industrial power converters, it offers a balance of efficiency and reliability. The TO-247 package ensures good thermal performance.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the STGW20NC60VD (600V, 20A IGBT) include:
- IRG4BC20UD (Infineon)
- FGA20N60 (Fairchild/ON Semi)
- H20R1202 (Renesas)
- IXGH20N60C3 (Littelfuse/IXYS)
These are 600V, ~20A IGBTs with similar characteristics. Verify pinout and specs for exact compatibility.
- IRG4BC20UD (Infineon)
- FGA20N60 (Fairchild/ON Semi)
- H20R1202 (Renesas)
- IXGH20N60C3 (Littelfuse/IXYS)
These are 600V, ~20A IGBTs with similar characteristics. Verify pinout and specs for exact compatibility.
Features
The STGW20NC60VD is an IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 600V (collector-emitter)
- Current Rating: 20A (continuous collector current)
- Low VCE(sat): 1.85V (typical at 10A) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Up to 150°C
- Robust & Reliable: Built-in freewheeling diode for inductive load protection
- Package: TO-247 (3-pin), suitable for power applications
Ideal for motor drives, inverters, and power supplies.
- Voltage Rating: 600V (collector-emitter)
- Current Rating: 20A (continuous collector current)
- Low VCE(sat): 1.85V (typical at 10A) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Up to 150°C
- Robust & Reliable: Built-in freewheeling diode for inductive load protection
- Package: TO-247 (3-pin), suitable for power applications
Ideal for motor drives, inverters, and power supplies.
Pinout
The STGW20NC60VD is a 3-pin IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package.
Pin Functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connects to load).
3. Emitter (E) – Ground/return path.
Key Features:
- 600V voltage rating.
- 20A continuous current.
- Low saturation voltage (VCE(sat)).
- Fast switching for power applications like motor drives and inverters.
Compact and robust for high-power switching.
Pin Functions:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (connects to load).
3. Emitter (E) – Ground/return path.
Key Features:
- 600V voltage rating.
- 20A continuous current.
- Low saturation voltage (VCE(sat)).
- Fast switching for power applications like motor drives and inverters.
Compact and robust for high-power switching.
Manufacturer
The STGW20NC60VD is a power MOSFET manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs. The company serves industries like automotive, industrial, consumer electronics, and IoT.
The STGW20NC60VD is part of their power MOSFET lineup, designed for high-efficiency switching applications such as power supplies and motor control.
STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs. The company serves industries like automotive, industrial, consumer electronics, and IoT.
The STGW20NC60VD is part of their power MOSFET lineup, designed for high-efficiency switching applications such as power supplies and motor control.
Application
The STGW20NC60VD is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power switching applications. Key application areas include:
- Motor Drives: Used in industrial and automotive motor control systems.
- Power Supplies: High-frequency switching in SMPS (Switched-Mode Power Supplies).
- Renewable Energy: Inverters for solar and wind power systems.
- Welding Equipment: High-current switching in arc welding machines.
- Induction Heating: Efficient power conversion in heating systems.
Its 600V/20A rating and low saturation voltage make it suitable for medium-power, high-reliability applications.
- Motor Drives: Used in industrial and automotive motor control systems.
- Power Supplies: High-frequency switching in SMPS (Switched-Mode Power Supplies).
- Renewable Energy: Inverters for solar and wind power systems.
- Welding Equipment: High-current switching in arc welding machines.
- Induction Heating: Efficient power conversion in heating systems.
Its 600V/20A rating and low saturation voltage make it suitable for medium-power, high-reliability applications.
Package
The STGW20NC60VD is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package. This package type is a through-hole, three-lead design known for its high power handling and thermal performance, making it suitable for applications like motor drives and inverters. The TO-247 is robust, with good heat dissipation characteristics.
