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STGF5H60DF
+物料清單IGBT TRENCH FS 600V 10A TO-220FP
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製造商部分 #STGF5H60DF
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規格
| 屬性 | 價值 |
| PartStatus | Active |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 10 A |
| Current-CollectorPulsed(Icm) | 20 A |
| Vce(on)(Max)@Vge,Ic | 1.95V @ 15V, 5A |
| Power-Max | 24 W |
| SwitchingEnergy | 56µJ (on), 78.5µJ (off) |
| InputType | Standard |
| GateCharge | 43 nC |
| Td(on/off)@25°C | 30ns/140ns |
| TestCondition | 400V, 5A, 47Ohm, 15V |
| ReverseRecoveryTime(trr) | 134.5 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-220-3 Full Pack |
| SupplierDevicePackage | TO-220FP |
| BaseProductNumber | STGF5 |
概述
Description
Key features include low on-resistance, fast switching speeds, and high thermal stability, making it efficient for high-frequency operations. It typically comes in a TO-220 package, providing good thermal dissipation, which is essential for maintaining performance under load.
The MOSFET is characterized by its gate threshold voltage and can be driven with standard logic levels, simplifying circuit design. Its robust design ensures reliability under demanding conditions, while built-in protection features help prevent failure from over-voltage or over-current scenarios.
Ideal for engineers looking to enhance efficiency and reliability in power electronics, the STGF5H60DF is a versatile choice in modern electronic designs.
Equivalent
1. IRF840 - 500V, 8A N-channel.
2. MOSFETs from ON Semiconductor - e.g., MTP5N60E.
3. Fairchild - FQP5N60.
4. Infineon - BSC500170.
Always check the specific parameters to ensure compatibility for your application.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DSS) of 600V, enabling it to handle high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 5A at a case temperature of 25°C, suitable for moderate power requirements.
3. R_DS(on): The on-resistance is low (typically around 0.65 ohms), which enhances efficiency and reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for simpler drive circuit designs.
5. Fast Switching: It provides fast switching capabilities, making it ideal for high-frequency applications.
6. Package Type: Available in TO-220 package, providing easy heat dissipation and mounting options.
These features make the STGF5H60DF suitable for use in power supplies, motor controls, and other electronic circuits requiring efficient switching.
Pinout
1. Gate (G) - This pin controls the MOSFET; applying a voltage here allows the device to switch on and conduct current between the drain and source.
2. Drain (D) - This is the output pin where the current flows out when the MOSFET is on.
3. Source (S) - This pin serves as the reference point for the current flowing through the device, typically connected to ground or the negative side of the load.
The STGF5H60DF is characterized by a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 5A, making it suitable for various high-voltage applications.
Manufacturer
STMicroelectronics is known for its commitment to innovation and sustainability, providing advanced technologies that enable energy efficiency and smart applications. With a strong focus on research and development, the company plays a significant role in the evolution of modern electronics and IoT (Internet of Things) technologies. ST's products, including power MOSFETs like the STGF5H60DF, are widely used in applications that require high performance and reliability.
Application
1. Motor Drives: For controlling AC and DC motors in industrial and automotive applications.
2. Power Inverters: In renewable energy systems, such as solar inverters and wind turbines.
3. UPS Systems: Uninterruptible power supplies for critical applications.
4. Welding Equipment: For controlling the power in electric arc welding.
5. HVAC Systems: In heating, ventilation, and air conditioning for efficient power management.
Its robustness and efficiency make it suitable for these high-power applications.