圖片僅供參考
STD18N65M2-EP
+物料清單MOSFET N-CH 650V 11A DPAK
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製造商意法半導體
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製造商部分 #STD18N65M2-EP
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規格
| 屬性 | 價值 |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR) |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 375mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14.4 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 700 pF @ 100 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-PAK (TO-252) |
