規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 295mOhm @ 8.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 2070 pF @ 50 V |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
概述
Description
The STB18NM80 is an N-channel power MOSFET from STMicroelectronics, designed for high-voltage, high-efficiency applications. Key features include:
- Voltage Rating: 800V, suitable for industrial and automotive systems.
- Current Handling: Up to 18A (continuous) with low on-resistance (RDS(on) ~0.28Ω), reducing conduction losses.
- Fast Switching: Optimized for applications like SMPS, motor drives, and inverters.
- Robustness: Avalanche-rated and housed in a TO-263 (D²PAK) package for thermal efficiency.
Ideal for power conversion and switching circuits requiring reliability and performance.
- Voltage Rating: 800V, suitable for industrial and automotive systems.
- Current Handling: Up to 18A (continuous) with low on-resistance (RDS(on) ~0.28Ω), reducing conduction losses.
- Fast Switching: Optimized for applications like SMPS, motor drives, and inverters.
- Robustness: Avalanche-rated and housed in a TO-263 (D²PAK) package for thermal efficiency.
Ideal for power conversion and switching circuits requiring reliability and performance.
Equivalent
Equivalent products to the STB18NM80 (800V, 18A N-channel MOSFET) include:
- IRFP460 (500V, 20A)
- STP18NM80N (800V, 18A, same series)
- FDP18N50 (500V, 18A)
- IXFH18N80 (800V, 18A)
Check voltage/current ratings and package compatibility before substitution. For exact matches, refer to datasheets.
- IRFP460 (500V, 20A)
- STP18NM80N (800V, 18A, same series)
- FDP18N50 (500V, 18A)
- IXFH18N80 (800V, 18A)
Check voltage/current ratings and package compatibility before substitution. For exact matches, refer to datasheets.
Features
The STB18NM80 is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V drain-source voltage (VDSS).
- Current Rating: 18A continuous drain current (ID).
- Low On-Resistance: 280mΩ (max) at 10V gate drive (RDS(on)).
- Fast Switching: Optimized for high-speed applications.
- Avalanche Rugged: High energy capability for reliability.
- Package: TO-263 (D2PAK), suitable for power applications.
- Gate Charge (Qg): Low (~60nC typical), improving efficiency.
Ideal for switching power supplies, motor control, and inverters due to its high voltage and current handling with low conduction losses.
- Voltage Rating: 800V drain-source voltage (VDSS).
- Current Rating: 18A continuous drain current (ID).
- Low On-Resistance: 280mΩ (max) at 10V gate drive (RDS(on)).
- Fast Switching: Optimized for high-speed applications.
- Avalanche Rugged: High energy capability for reliability.
- Package: TO-263 (D2PAK), suitable for power applications.
- Gate Charge (Qg): Low (~60nC typical), improving efficiency.
Ideal for switching power supplies, motor control, and inverters due to its high voltage and current handling with low conduction losses.
Pinout
The STB18NM80 is an N-channel MOSFET with 3 pins (TO-263/D²PAK package):
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current input (connected to load).
3. Source (S) – Main current output (connected to ground).
Key Features:
- 800V drain-source voltage (VDS).
- 18A continuous drain current (ID).
- Low on-resistance (RDS(on) = 0.28Ω).
- Suitable for high-voltage switching (e.g., power supplies, motor drives).
Concise and functional for power applications.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current input (connected to load).
3. Source (S) – Main current output (connected to ground).
Key Features:
- 800V drain-source voltage (VDS).
- 18A continuous drain current (ID).
- Low on-resistance (RDS(on) = 0.28Ω).
- Suitable for high-voltage switching (e.g., power supplies, motor drives).
Concise and functional for power applications.
Package
The STB18NM80 is a power MOSFET housed in a TO-263 (D²PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in high-power applications. It features a tab for heat dissipation, making it suitable for demanding environments. The TO-263 package is robust and widely used in automotive, industrial, and power supply designs.
