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規格
| 屬性 | 價值 |
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C3 |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Part # Aliases | SP000013833 SPB21N5C3XT SPB21N50C3ATMA1 |
| Mounting Type | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 0.139332 oz |
| Package / Case | D2PAK-3 (TO-263-3) |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 500 V |
| Id - Continuous Drain Current | 21 A |
| Rds On | 190 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3.9 V |
| Qg - Gate Charge | 95 nC |
| Pd - Power Dissipation | 208 W |
| Channel Mode | Enhancement |
| Fall Time | 4.5 ns |
| Rise Time | 5 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 67 ns |
| Typical Turn - On Delay Time | 10 ns |
| REACH - SVHC | Details |
概述
Description
The SPB21N50C3 is a high-voltage N-channel MOSFET designed for power applications. With a voltage rating of 500V and a continuous drain current of 21A, it is suitable for use in various switching applications, including power supplies, motor control, and industrial equipment. The device features a low on-resistance (RDS(on)) which minimizes power loss and heat generation, enhancing efficiency.
Additionally, the SPB21N50C3 has a high-speed switching capability, making it suitable for fast-switching circuits. Its robust construction and thermal performance allow it to operate effectively in demanding conditions. The package typically used is TO-220, which facilitates effective heat dissipation and ease of handling in circuit designs.
Overall, the SPB21N50C3 is an ideal choice for engineers looking for a reliable, high-performance MOSFET for various high-voltage applications.
Additionally, the SPB21N50C3 has a high-speed switching capability, making it suitable for fast-switching circuits. Its robust construction and thermal performance allow it to operate effectively in demanding conditions. The package typically used is TO-220, which facilitates effective heat dissipation and ease of handling in circuit designs.
Overall, the SPB21N50C3 is an ideal choice for engineers looking for a reliable, high-performance MOSFET for various high-voltage applications.
Equivalent
The SPB21N50C3 is a MOSFET transistor. Equivalent products include the STP21N50, IRF250, and FQP21N50. Always check the datasheets for specific parameters like voltage, current ratings, on-resistance, and packaging to ensure compatibility in your application.
Features
The SPB21N50C3 is a high-performance N-channel MOSFET designed for various applications in power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 21A, allowing it to handle significant loads.
3. Low On-Resistance: With a low R_DS(on) value, it ensures minimal conduction losses, enhancing efficiency.
4. Fast Switching: Optimized for fast switching speeds, facilitating high-frequency operation in power converters.
5. Thermal Performance: The MOSFET is designed to operate effectively in high-temperature environments, with a junction temperature range up to 150°C.
6. TO-220 Package: It comes in a TO-220 package, providing excellent thermal dissipation and ease of mounting.
These features make the SPB21N50C3 ideal for applications such as switch-mode power supplies, motor controls, and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 21A, allowing it to handle significant loads.
3. Low On-Resistance: With a low R_DS(on) value, it ensures minimal conduction losses, enhancing efficiency.
4. Fast Switching: Optimized for fast switching speeds, facilitating high-frequency operation in power converters.
5. Thermal Performance: The MOSFET is designed to operate effectively in high-temperature environments, with a junction temperature range up to 150°C.
6. TO-220 Package: It comes in a TO-220 package, providing excellent thermal dissipation and ease of mounting.
These features make the SPB21N50C3 ideal for applications such as switch-mode power supplies, motor controls, and automotive systems.
Pinout
The SPB21N50C3 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications. It typically comes in a TO-220 package, which has three terminals: Gate (G), Drain (D), and Source (S).
The pin count for the SPB21N50C3 is 3. The functions of each pin are as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage. A positive voltage relative to the source allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin serves as the reference point for the gate voltage and is typically connected to ground in many applications.
The SPB21N50C3 is rated for 500V and can handle significant current levels, making it suitable for various power management and switching applications.
The pin count for the SPB21N50C3 is 3. The functions of each pin are as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage. A positive voltage relative to the source allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin serves as the reference point for the gate voltage and is typically connected to ground in many applications.
The SPB21N50C3 is rated for 500V and can handle significant current levels, making it suitable for various power management and switching applications.
Manufacturer
The SPB21N50C3 is manufactured by Infineon Technologies AG. Infineon, headquartered in Neubiberg, Germany, is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor products. Their offerings include power semiconductors, microcontrollers, sensors, and security solutions, catering to various applications such as automotive, industrial, and consumer electronics. Infineon is particularly known for its innovations in power management and energy efficiency, playing a significant role in the advancement of technologies for electric mobility, renewable energy, and intelligent manufacturing.
Application
The SPB21N50C3 is a high-voltage N-channel MOSFET primarily used in applications such as power supplies, motor control, and industrial automation. Its features make it suitable for high-efficiency switching applications, including DC-DC converters, inverter circuits, and lighting control. Additionally, it can be utilized in consumer electronics for power management and in renewable energy systems like solar inverters. Its ability to handle high currents and voltages also makes it beneficial for automotive applications, including power distribution and electric vehicle systems.
Package
The SPB21N50C3 is typically packaged in a TO-220 or similar package type, which is designed for efficient heat dissipation and ease of mounting on heatsinks. This package is commonly used for high-power applications.