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SI7898DP-T1-GE3
+物料清單MOSFET N-CH 150V 3A PPAK SO-8
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製造商矽尼克斯
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製造商部分 #SI7898DP-T1-GE3
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規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 3.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 21 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
概述
Description
The SI7898DP-T1-GE3 is a specific model of a MOSFET, developed by Vishay Siliconix, known for its use in various electronic applications. This device is a PowerPAK SO-8 type, which is favored for its compact size and efficient power handling capabilities. It typically features a low on-resistance and fast switching speeds, making it suitable for applications requiring efficient power management, such as DC-DC converters and load switching.
The SI7898DP-T1-GE3 is designed to handle significant power loads while minimizing energy loss, contributing to overall energy efficiency. It is built using advanced semiconductor technology to ensure reliability and performance under stress. The component is often used in consumer electronics, industrial systems, and computing equipment requiring robust power management solutions. It complies with environmental and safety standards, including RoHS, which restricts the use of certain hazardous substances. Its design and specifications make it a versatile choice for engineers looking to optimize power efficiency in their electronic designs.
The SI7898DP-T1-GE3 is designed to handle significant power loads while minimizing energy loss, contributing to overall energy efficiency. It is built using advanced semiconductor technology to ensure reliability and performance under stress. The component is often used in consumer electronics, industrial systems, and computing equipment requiring robust power management solutions. It complies with environmental and safety standards, including RoHS, which restricts the use of certain hazardous substances. Its design and specifications make it a versatile choice for engineers looking to optimize power efficiency in their electronic designs.
Equivalent
The SI7898DP-T1-GE3 is a N-channel MOSFET manufactured by Vishay. Equivalent products can include MOSFETs with similar voltage, current, and package specifications from other manufacturers. Potential equivalents include:
1. IRF530N by Infineon Technologies
2. STP55NF06 by STMicroelectronics
3. FQP30N06L by ON Semiconductor
Always check the datasheets to ensure compatibility in terms of electrical characteristics and package dimensions.
1. IRF530N by Infineon Technologies
2. STP55NF06 by STMicroelectronics
3. FQP30N06L by ON Semiconductor
Always check the datasheets to ensure compatibility in terms of electrical characteristics and package dimensions.
Features
The SI7898DP-T1-GE3 is a P-channel MOSFET designed for power management applications. It features a low on-resistance, which helps in reducing power loss and improving efficiency. The MOSFET is housed in a compact PowerPAK SO-8 package, which is suitable for space-constrained applications. It is designed to handle medium levels of power and is suitable for various applications like load switching and power management in computing and consumer electronics.
Key features include:
- Low on-resistance for efficient power management.
- P-channel configuration.
- Compact PowerPAK SO-8 package for better thermal performance.
- Suitable for applications requiring efficient load switching.
These features make it an excellent choice for designers looking to optimize space and power efficiency in their electronic designs.
Key features include:
- Low on-resistance for efficient power management.
- P-channel configuration.
- Compact PowerPAK SO-8 package for better thermal performance.
- Suitable for applications requiring efficient load switching.
These features make it an excellent choice for designers looking to optimize space and power efficiency in their electronic designs.
Pinout
The SI7898DP-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It comes in a PowerPAK SO-8 package, which typically has 8 pins. This MOSFET is designed for use in a variety of applications that require efficient power management and switching, such as DC/DC converters and power supply circuits.
The key features of the SI7898DP-T1-GE3 include low on-resistance, high current handling capability, and fast switching speeds. It is commonly used for its efficiency in switching applications, which helps in reducing power losses and improving overall performance in electronic circuits.
In terms of pin functions, typical assignments for PowerPAK SO-8 packages include:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load and is the output path for current.
3. Source (S): Connects to the ground or return path for current.
For the exact pin assignment, it's important to refer to the manufacturer's datasheet, as specific configurations can vary by device and application.
The key features of the SI7898DP-T1-GE3 include low on-resistance, high current handling capability, and fast switching speeds. It is commonly used for its efficiency in switching applications, which helps in reducing power losses and improving overall performance in electronic circuits.
In terms of pin functions, typical assignments for PowerPAK SO-8 packages include:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load and is the output path for current.
3. Source (S): Connects to the ground or return path for current.
For the exact pin assignment, it's important to refer to the manufacturer's datasheet, as specific configurations can vary by device and application.
Manufacturer
The SI7898DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that produces a wide range of electronic components, including semiconductors and passive components. Founded in 1962, Vishay is known for its innovations in discrete semiconductors such as diodes, MOSFETs, and optoelectronics, as well as passive electronic components like resistors, inductors, and capacitors. The company serves various industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, and aerospace.
Application
The SI7898DP-T1-GE3 is a MOSFET device commonly used in various applications such as power management systems, DC-DC converters, and motor control circuits. It's suitable for use in computing systems, telecommunications equipment, and automotive electronics due to its efficient switching capabilities and low on-resistance. Additionally, it can be applied in load switching, battery management, and voltage regulation tasks where compact size and thermal performance are critical.
Package
The SI7898DP-T1-GE3 is a PowerPAK® SO-8 package type. This package is designed for high-performance power MOSFETs, offering low thermal resistance and a compact form factor suitable for efficient power management in electronic devices.
