規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 8.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 14mOhm @ 10.5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 55 nC @ 5 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
概述
Description
The SI4401BDY-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 6.5 mΩ at VGS = -10 V, ensuring efficient power handling.
- High Current Capability: Supports up to -40 A continuous drain current.
- Voltage Rating: -40 V drain-to-source voltage (VDS), suitable for automotive and industrial systems.
- Compact Package: PowerPAK® SO-8, optimized for space-constrained designs.
- Fast Switching: Ideal for DC-DC converters, load switches, and battery management.
This MOSFET is AEC-Q101 qualified, making it reliable for automotive applications. Its low gate charge (Qg) and low thermal resistance enhance performance in high-efficiency power circuits.
Typical Applications:
- Motor control
- Power supplies
- Battery protection circuits
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): Typically 6.5 mΩ at VGS = -10 V, ensuring efficient power handling.
- High Current Capability: Supports up to -40 A continuous drain current.
- Voltage Rating: -40 V drain-to-source voltage (VDS), suitable for automotive and industrial systems.
- Compact Package: PowerPAK® SO-8, optimized for space-constrained designs.
- Fast Switching: Ideal for DC-DC converters, load switches, and battery management.
This MOSFET is AEC-Q101 qualified, making it reliable for automotive applications. Its low gate charge (Qg) and low thermal resistance enhance performance in high-efficiency power circuits.
Typical Applications:
- Motor control
- Power supplies
- Battery protection circuits
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the SI4401BDY-T1-GE3 (P-channel MOSFET, 30V, 5.8A) include:
- IRF9Z34N (P-channel, 55V, 8A)
- FQP27P06 (P-channel, 60V, 27A)
- AO3401 (P-channel, 30V, 4A)
- IRLML6401 (P-channel, 12V, 4A)
Check datasheets for exact compatibility in your application.
- IRF9Z34N (P-channel, 55V, 8A)
- FQP27P06 (P-channel, 60V, 27A)
- AO3401 (P-channel, 30V, 4A)
- IRLML6401 (P-channel, 12V, 4A)
Check datasheets for exact compatibility in your application.
Features
The SI4401BDY-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 60mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SO-8 (Compact surface-mount design)
- Applications: Power management, load switching, battery protection
Designed for high efficiency and low power loss, it’s ideal for portable electronics and DC-DC converters.
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 60mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SO-8 (Compact surface-mount design)
- Applications: Power management, load switching, battery protection
Designed for high efficiency and low power loss, it’s ideal for portable electronics and DC-DC converters.
Pinout
The SI4401BDY-T1-GE3 is a P-channel MOSFET in a SO-8 package with 8 pins.
Key Functions:
- Pins 1, 2, 3 (Source): Connected to the power supply (typically high-side switching).
- Pin 4 (Gate): Controls the MOSFET's switching (logic-level compatible).
- Pins 5, 6, 7, 8 (Drain): Output connection, often tied to the load.
Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low RDS(on) for efficient power handling.
Commonly used in power management, load switching, and DC-DC converters.
Key Functions:
- Pins 1, 2, 3 (Source): Connected to the power supply (typically high-side switching).
- Pin 4 (Gate): Controls the MOSFET's switching (logic-level compatible).
- Pins 5, 6, 7, 8 (Drain): Output connection, often tied to the load.
Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low RDS(on) for efficient power handling.
Commonly used in power management, load switching, and DC-DC converters.
Application
The SI4401BDY-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in DC-DC converters, power supplies, and battery protection circuits.
2. Automotive Systems – Electronic control units (ECUs), lighting, and infotainment due to its efficiency and reliability.
3. Consumer Electronics – Smartphones, tablets, and laptops for power switching and protection.
4. Industrial Applications – Motor drives, inverters, and automation systems requiring low on-resistance and fast switching.
Its compact package (SO-8) and performance make it suitable for space-constrained, high-efficiency designs.
1. Power Management – Switching and load control in DC-DC converters, power supplies, and battery protection circuits.
2. Automotive Systems – Electronic control units (ECUs), lighting, and infotainment due to its efficiency and reliability.
3. Consumer Electronics – Smartphones, tablets, and laptops for power switching and protection.
4. Industrial Applications – Motor drives, inverters, and automation systems requiring low on-resistance and fast switching.
Its compact package (SO-8) and performance make it suitable for space-constrained, high-efficiency designs.
Package
The SI4401BDY-T1-GE3 is a MOSFET in a PowerPAK® SO-8 package. This compact surface-mount design offers efficient thermal performance and is commonly used in power management applications. The package type ensures high current handling and low on-resistance, making it suitable for switching circuits.
