規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.1A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 112mOhm @ 2.8A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 405 pF @ 10 V |
| PowerDissipation(Max) | 860mW (Ta), 1.6W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
概述
Description
The SI2301CDS-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -20V drain-to-source (VDS).
- Current Rating: -2.7A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at VGS = -4.5V, minimizing power loss.
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Common uses include load switching, power management, and battery protection in portable devices, IoT, and consumer electronics. Its low threshold voltage (VGS(th) ≈ -0.65V) ensures compatibility with low-power logic circuits.
For detailed specs, refer to the datasheet.
- Voltage Rating: -20V drain-to-source (VDS).
- Current Rating: -2.7A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at VGS = -4.5V, minimizing power loss.
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Common uses include load switching, power management, and battery protection in portable devices, IoT, and consumer electronics. Its low threshold voltage (VGS(th) ≈ -0.65V) ensures compatibility with low-power logic circuits.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the SI2301CDS-T1-E3 (P-channel MOSFET, 20V, 2.7A) include:
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs and pin compatibility.
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs and pin compatibility.
Features
The SI2301CDS-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V drain-to-source (VDS)
- Current Rating: -4.3A continuous drain current (ID)
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -0.7V to -1.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (small form factor)
- Applications: Power management, load switching, battery protection
Compact and efficient, it’s ideal for portable and low-voltage systems.
- Voltage Rating: -20V drain-to-source (VDS)
- Current Rating: -4.3A continuous drain current (ID)
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -0.7V to -1.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (small form factor)
- Applications: Power management, load switching, battery protection
Compact and efficient, it’s ideal for portable and low-voltage systems.
Pinout
The SI2301CDS-T1-E3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins:
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D): Output connection, switches to the source when the gate is activated.
Key Features:
- Voltage Rating: -20V (D-S).
- Current: -2.7A (continuous).
- Low Threshold Voltage: -1V (typical).
- Applications: Power switching, load control, and battery management.
Compact and efficient for low-voltage circuits.
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D): Output connection, switches to the source when the gate is activated.
Key Features:
- Voltage Rating: -20V (D-S).
- Current: -2.7A (continuous).
- Low Threshold Voltage: -1V (typical).
- Applications: Power switching, load control, and battery management.
Compact and efficient for low-voltage circuits.
Manufacturer
The SI2301CDS-T1-E3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components.
Vishay is a well-established company known for producing high-quality MOSFETs, diodes, resistors, and capacitors, serving industries like automotive, industrial, computing, and consumer electronics. Founded in 1962, Vishay is recognized for innovation and reliability in electronic components.
The SI2301CDS-T1-E3 is a P-channel MOSFET, commonly used in power management and switching applications.
Vishay is a well-established company known for producing high-quality MOSFETs, diodes, resistors, and capacitors, serving industries like automotive, industrial, computing, and consumer electronics. Founded in 1962, Vishay is recognized for innovation and reliability in electronic components.
The SI2301CDS-T1-E3 is a P-channel MOSFET, commonly used in power management and switching applications.
Application
The SI2301CDS-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Portable Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-power applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Portable Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-power applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.
Package
The SI2301CDS-T1-E3 is a P-channel MOSFET in a SOT-23-3 (TO-236AB) surface-mount package. It is compact, suitable for low-power applications, and features three pins (gate, source, drain). The package dimensions are approximately 2.9mm x 1.3mm x 0.95mm.
