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SCT30N120
+物料清單SICFET N-CH 1200V 40A HIP247
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製造商意法半導體
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製造商部分 #SCT30N120
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有存貨7001
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規格
| 屬性 | 價值 |
| Supplier | STMicroelectronics |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 100mOhm @ 20A, 20V |
| Vgs(th)(Max)@Id | 2.6V @ 1mA (Typ) |
| GateCharge(Qg)(Max)@Vgs | 105 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 1700 pF @ 400 V |
| PowerDissipation(Max) | 270W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
概述
Description
The SCT30N120 is a high-voltage, high-current N-channel power switch (MOSFET or IGBT, depending on vendor) used in power electronics.
What it does:
- Serves as the main switching element in HV power supplies, motor drives, inverters, and DC-DC converters.
What to check in the datasheet:
- Blocking voltage (Vds or Vce) and continuous current (Id)
- On-state resistance (Rds(on)) or saturation voltage
- Switching speed, gate drive requirements (Vgs), and protection features (di/dt, avalanche)
- Safe operating area (SOA), thermal resistance, and packaging (TO-220, D2PAK, etc.)
Key notes:
- Exact ratings, pinout, and package vary by vendor; always consult the specific datasheet.
- Requires proper gate drive and thermal management.
If you share the manufacturer or a datasheet link, I can give precise specs and an application note.
What it does:
- Serves as the main switching element in HV power supplies, motor drives, inverters, and DC-DC converters.
What to check in the datasheet:
- Blocking voltage (Vds or Vce) and continuous current (Id)
- On-state resistance (Rds(on)) or saturation voltage
- Switching speed, gate drive requirements (Vgs), and protection features (di/dt, avalanche)
- Safe operating area (SOA), thermal resistance, and packaging (TO-220, D2PAK, etc.)
Key notes:
- Exact ratings, pinout, and package vary by vendor; always consult the specific datasheet.
- Requires proper gate drive and thermal management.
If you share the manufacturer or a datasheet link, I can give precise specs and an application note.
Pinout
- Pin count: 3 leads (plus the metal tab)
- Pinout (typical TO-220 style): Pin 1 = Gate, Pin 2 = Collector/Drain, Pin 3 = Emitter/Source. The tab is connected to the Collector/Drain.
- Function: Gate controls conduction between the Collector/Drain and Emitter/Source, i.e., a high‑voltage switching device (IGBT/MOSFET).
- Pinout (typical TO-220 style): Pin 1 = Gate, Pin 2 = Collector/Drain, Pin 3 = Emitter/Source. The tab is connected to the Collector/Drain.
- Function: Gate controls conduction between the Collector/Drain and Emitter/Source, i.e., a high‑voltage switching device (IGBT/MOSFET).
Manufacturer
Manufacturer: Sanken Electric Co., Ltd.
What kind of company: A Japanese electronics company that designs and manufactures power semiconductors (IGBTs, diodes, thyristors) and power modules, serving global markets in power electronics.
What kind of company: A Japanese electronics company that designs and manufactures power semiconductors (IGBTs, diodes, thyristors) and power modules, serving global markets in power electronics.
Application
Applications: high-voltage switching in power electronics (30 A, 1200 V). Typical use cases include:
- Offline AC–DC SMPS front-ends and PFC stages
- DC–DC converters for energy storage, UPS, and data centers
- Solar and wind/grid-tied inverters
- Industrial motor drives and servo drives (inverter stages)
- Telecom and electric vehicle charging power stages
- Offline AC–DC SMPS front-ends and PFC stages
- DC–DC converters for energy storage, UPS, and data centers
- Solar and wind/grid-tied inverters
- Industrial motor drives and servo drives (inverter stages)
- Telecom and electric vehicle charging power stages
Package
TO-220AB (through-hole) power MOSFET package.
