規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 39A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 18V |
| Rds On(Max) @ Id Vgs | 78mOhm @ 13A, 18V |
| Vgs(th)(Max) @ Id | 5.6V @ 6.67mA |
| Gate Charge(Qg)(Max) @ Vgs | 58 nC @ 18 V |
| Vgs(Max) | +22V, -4V |
| Input Capacitance(Ciss)(Max) @ Vds | 852 pF @ 500 V |
| Power Dissipation (Max) | 165W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
概述
Description
The SCT3060ALGC11 is a silicon carbide (SiC) Schottky diode designed for high-efficiency power applications. Key features include:
- High voltage rating: 650V
- Low forward voltage drop: Reduces conduction losses
- Fast switching: Minimizes switching losses, ideal for high-frequency circuits
- High-temperature operation: Reliable performance up to 175°C
- Zero reverse recovery current: Enhances efficiency in power converters
Common applications include power factor correction (PFC), solar inverters, EV charging, and switch-mode power supplies (SMPS). Its robust SiC technology ensures improved efficiency and thermal management compared to traditional silicon diodes.
For detailed specifications, refer to the manufacturer’s datasheet.
- High voltage rating: 650V
- Low forward voltage drop: Reduces conduction losses
- Fast switching: Minimizes switching losses, ideal for high-frequency circuits
- High-temperature operation: Reliable performance up to 175°C
- Zero reverse recovery current: Enhances efficiency in power converters
Common applications include power factor correction (PFC), solar inverters, EV charging, and switch-mode power supplies (SMPS). Its robust SiC technology ensures improved efficiency and thermal management compared to traditional silicon diodes.
For detailed specifications, refer to the manufacturer’s datasheet.
Equivalent
Equivalent products to the SCT3060ALGC11 (a 60V, 30A SiC MOSFET from ROHM) include:
- C3M0065090D (Wolfspeed)
- SCT3030AL (ROHM)
- IPW60R070CFD7A (Infineon)
- STL120N10F7 (STMicroelectronics)
These alternatives offer similar voltage/current ratings or SiC technology. Verify specs for exact compatibility.
- C3M0065090D (Wolfspeed)
- SCT3030AL (ROHM)
- IPW60R070CFD7A (Infineon)
- STL120N10F7 (STMicroelectronics)
These alternatives offer similar voltage/current ratings or SiC technology. Verify specs for exact compatibility.
Features
The SCT3060ALGC11 is a silicon carbide (SiC) Schottky diode with the following key features:
- Voltage Rating: 600V
- Current Rating: 30A (continuous)
- Low Forward Voltage Drop: Reduces conduction losses
- Fast Switching: Minimal reverse recovery for high efficiency
- High Temperature Operation: Up to 175°C
- AEC-Q101 Qualified: Suitable for automotive applications
- TO-247-3 Package: Robust and widely compatible
Ideal for power converters, EV systems, and industrial applications requiring high efficiency and reliability.
- Voltage Rating: 600V
- Current Rating: 30A (continuous)
- Low Forward Voltage Drop: Reduces conduction losses
- Fast Switching: Minimal reverse recovery for high efficiency
- High Temperature Operation: Up to 175°C
- AEC-Q101 Qualified: Suitable for automotive applications
- TO-247-3 Package: Robust and widely compatible
Ideal for power converters, EV systems, and industrial applications requiring high efficiency and reliability.
Package
The SCT3060ALGC11 is a TO-263-7L (D2PAK-7L) package type. It's a surface-mount, 7-lead variant of the D2PAK, designed for high-power applications with efficient thermal dissipation. The package includes an exposed pad for improved heat sinking.
