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S29GL512P10FFIR10
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製造商英飛淩科技
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製造商部分 #S29GL512P10FFIR10
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有存貨3714
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規格
| 屬性 | 價值 |
| Brand | Infineon Technologies |
| ProductType | NOR Flash |
| Subcategory | Memory & Data Storage |
| Series | S29GL512P |
| MountingStyle | SMD/SMT |
| InterfaceType | Parallel |
| MinimumOperatingTemperature | - 40 C |
| MaximumOperatingTemperature | + 85 C |
| SupplyVoltage-Min | 2.7 V |
| SupplyVoltage-Max | 3.6 V |
| MemorySize | 512 Mbit |
| Package/Case | BGA-64 |
| UnitWeight | 0.006004 oz |
| Organization | 64 M x 8 |
| Packaging | Tray |
| ActiveReadCurrent-Max | 110 mA |
| FactoryPackQuantity:FactoryPackQuantity | 180 |
| MoistureSensitive | Yes |
| ShippingRestrictions | Mouser does not presently sell this product in your region. |
| DataBusWidth | 8 bit |
| Speed | 100 ns |
| TimingType | Asynchronous |
| Architecture | Sector |
| MemoryType | NOR |
概述
Description
Key features include:
- Density: 512 Mb (64 MB)
- Access Time: Fast read speeds, typically around 100 ns
- Endurance: Greater than 100,000 program/erase cycles
- Data Retention: Typically 20 years at 125°C
- Pin Configuration: Compatible with standard NOR flash footprints for easy integration
This device is commonly used in embedded systems, automotive applications, and consumer electronics, providing reliable storage for firmware, configuration data, and other critical information. The S29GL512P10FFIR10's combination of speed, efficiency, and durability makes it suitable for a wide range of applications.
Equivalent
1. Micron MT29F512G08CFAC
2. Winbond W25N512JV
3. Toshiba TC58NVG0S3HBAI4
4. Samsung K9F1G08U0M
Always verify specifications and compatibility for your application before substitution.
Features
1. Density: 512 Mb capacity, suitable for various applications.
2. Interface: Parallel interface for easy integration with microcontrollers and processors.
3. Access Speed: Up to 100 MHz read speed, enabling fast data retrieval.
4. Architecture: Supports 8-bit and 16-bit data bus configurations.
5. Endurance: Approximately 100,000 program/erase cycles, ensuring reliability for applications requiring frequent updates.
6. Data Retention: Retains data for over 20 years at 85°C.
7. Operation Modes: Supports asynchronous read, program, and erase operations.
8. Security Features: Includes sector protection and OTP (One-Time Programmable) areas for data security.
9. Package Options: Available in various packages, including TSOP and BGA, for versatile design integration.
This device is ideal for consumer electronics, automotive applications, and industrial systems needing reliable non-volatile storage.
Pinout
Pin Count: 48 pins.
Key Functions:
- Data I/O Pins (DQ0-DQ15): 16 bi-directional data input/output pins for data transfer.
- Address Pins (A0-A21): Used for addressing memory locations (A0-A20 for addressing, A21 for higher address).
- Control Pins:
- CE# (Chip Enable): Activates the chip.
- OE# (Output Enable): Controls data output.
- WE# (Write Enable): Enables write operations.
- RESET#: Resets the device.
- VCC/VSS Pins: Power supply and ground connections.
- BP0/BP1 (Block Protect): Used for block protection during write/erase operations.
This device supports asynchronous read and write operations, making it suitable for various applications requiring non-volatile storage.
Manufacturer
Spansion's products are designed to meet the growing demand for non-volatile memory in devices that require fast and reliable data storage. The company has a strong emphasis on innovation and quality, serving various markets such as telecommunications, automotive, and consumer electronics.
In 2014, Spansion merged with Cypress Semiconductor, which further expanded their product offerings and market reach. Cypress, known for its microcontrollers and embedded solutions, continues to support Spansion's memory products while enhancing their portfolio with complementary technologies. Together, they focus on providing advanced solutions that address the needs of modern electronic systems.