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RQ3E180BNTB
+物料清單MOSFET N-CHANNEL 30V 39A 8HSMT
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製造商部分 #RQ3E180BNTB
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規格
| 屬性 | 價值 |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 39A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.9mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 37 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3500 pF @ 15 V |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSMT (3.2x3) |
