圖片僅供參考
PMDPB42UN,115
+物料清單MOSFET 2N-CH 20V 3.9A HUSON6
-
製造商恩智浦美國股份有限公司。
-
製造商部分 #PMDPB42UN,115
-
有存貨5174
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | NXP USA Inc.,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 3.9A |
| RdsOn(Max)@IdVgs | 50mOhm @ 3.9A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.5nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 185pF @ 10V |
| Power-Max | 510mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-UDFN Exposed Pad |
