規格
| 屬性 | 價值 |
| Supplier | onsemi |
| Package / Case | Tray |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 114A (Tc) |
| Rds On(Max) @ Id Vgs | 14mOhm @ 100A, 20V |
| Vgs(th)(Max) @ Id | 4.3V @ 40mA |
| Gate Charge(Qg)(Max) @ Vgs | 454nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4707pF @ 800V |
| Power - Max | 250W (Tj) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
