規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Ta), 61A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 16mOhm @ 29A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 85 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4800 pF @ 25 V |
| Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
概述
Description
The NVD5117PLT4G is a 40V, 1A P-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 85mΩ at VGS = -10V, enhancing efficiency.
- Fast Switching: Suitable for DC-DC converters, load switches, and battery management.
- Compact Package: SOT-23-3 (TO-236AB), ideal for space-constrained designs.
- Low Gate Charge (Qg): Reduces switching losses.
Common uses include power distribution, motor control, and portable electronics. Its 40V drain-source voltage (VDS) and 1A continuous drain current (ID) make it versatile for low-power systems.
For detailed specs, refer to the datasheet from ON Semiconductor.
- Low On-Resistance (RDS(on)): Typically 85mΩ at VGS = -10V, enhancing efficiency.
- Fast Switching: Suitable for DC-DC converters, load switches, and battery management.
- Compact Package: SOT-23-3 (TO-236AB), ideal for space-constrained designs.
- Low Gate Charge (Qg): Reduces switching losses.
Common uses include power distribution, motor control, and portable electronics. Its 40V drain-source voltage (VDS) and 1A continuous drain current (ID) make it versatile for low-power systems.
For detailed specs, refer to the datasheet from ON Semiconductor.
Equivalent
Equivalent products to the NVD5117PLT4G (a 40V N-channel MOSFET) include:
- IRL40B209 (40V, 62A)
- AON7400 (40V, 60A)
- SI7147DP-T1-GE3 (40V, 60A)
- FDPC5030SG (40V, 85A)
Check datasheets for exact specs before substitution.
- IRL40B209 (40V, 62A)
- AON7400 (40V, 60A)
- SI7147DP-T1-GE3 (40V, 60A)
- FDPC5030SG (40V, 85A)
Check datasheets for exact specs before substitution.
Features
The NVD5117PLT4G is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 170A (pulsed) / 51A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-263 (D2PAK), surface-mount design
- Gate Charge (Qg): 170nC (typical) for reduced switching losses
- Avalanche Energy Rated: Robust against inductive load spikes
- Applications: Power supplies, motor control, DC-DC converters, and automotive systems
Designed for high-power, low-loss switching, it offers excellent thermal performance and reliability.
- Voltage Rating: 60V
- Current Rating: 170A (pulsed) / 51A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-263 (D2PAK), surface-mount design
- Gate Charge (Qg): 170nC (typical) for reduced switching losses
- Avalanche Energy Rated: Robust against inductive load spikes
- Applications: Power supplies, motor control, DC-DC converters, and automotive systems
Designed for high-power, low-loss switching, it offers excellent thermal performance and reliability.
Pinout
The NVD5117PLT4G is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET for high-efficiency power switching.
- Low on-resistance (RDS(on)) for reduced conduction losses.
- Designed for applications like DC-DC converters, motor control, and power management.
- Key Features:
- VDS: 30V
- ID: 10A per channel (continuous).
- Logic-level gate drive compatibility.
This device is commonly used in compact power designs requiring dual MOSFETs in a single package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET for high-efficiency power switching.
- Low on-resistance (RDS(on)) for reduced conduction losses.
- Designed for applications like DC-DC converters, motor control, and power management.
- Key Features:
- VDS: 30V
- ID: 10A per channel (continuous).
- Logic-level gate drive compatibility.
This device is commonly used in compact power designs requiring dual MOSFETs in a single package.
Manufacturer
The NVD5117PLT4G is a MOSFET manufactured by ON Semiconductor, a leading global supplier of power management, analog, and semiconductor solutions.
ON Semiconductor (now known as onsemi) is a Fortune 500 company specializing in energy-efficient technologies for automotive, industrial, and consumer markets. They produce a wide range of semiconductor components, including power MOSFETs, ICs, and sensors.
The NVD5117PLT4G is a 30V N-channel MOSFET designed for high-efficiency power switching applications.
ON Semiconductor (now known as onsemi) is a Fortune 500 company specializing in energy-efficient technologies for automotive, industrial, and consumer markets. They produce a wide range of semiconductor components, including power MOSFETs, ICs, and sensors.
The NVD5117PLT4G is a 30V N-channel MOSFET designed for high-efficiency power switching applications.
Application
The NVD5117PLT4G is a high-voltage, high-speed power MOSFET driver primarily used in:
1. Switching Power Supplies – Efficiently drives MOSFETs in AC-DC and DC-DC converters.
2. Motor Control – Enables precise control in industrial and automotive motor drives.
3. LED Lighting – Supports high-power LED drivers for stable performance.
4. Class-D Audio Amplifiers – Enhances efficiency in audio applications.
5. Automotive Systems – Used in electric vehicles (EVs) and battery management.
Its fast switching and robust design make it ideal for high-frequency, high-efficiency power applications.
1. Switching Power Supplies – Efficiently drives MOSFETs in AC-DC and DC-DC converters.
2. Motor Control – Enables precise control in industrial and automotive motor drives.
3. LED Lighting – Supports high-power LED drivers for stable performance.
4. Class-D Audio Amplifiers – Enhances efficiency in audio applications.
5. Automotive Systems – Used in electric vehicles (EVs) and battery management.
Its fast switching and robust design make it ideal for high-frequency, high-efficiency power applications.
Package
The NVD5117PLT4G is a PowerFlat 5x6 (DFN-30) package. It features a dual flat no-lead (DFN) design with 30 pins, measuring 5mm x 6mm. This compact, surface-mount package is optimized for high-power applications, offering efficient thermal performance and space-saving benefits. Commonly used in power management ICs, it ensures reliable operation in tight PCB layouts.
