NTR4003NT1G

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NTR4003NT1G

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MOSFET N-CH 30V 500MA SOT23-3

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  • 製造商部分 #NTR4003NT1G

  • 包裹 SOT-23

  • 有存貨2062

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規格

屬性 價值
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 500mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4V
Rds On(Max) @ Id Vgs 1.5Ohm @ 10mA, 4V
Vgs(th)(Max) @ Id 1.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 1.15 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V
Power Dissipation (Max) 690mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

概述

Description

The NTR4003NT1G is a P-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 30 mΩ at VGS = -4.5V, reducing power loss.
- Low Gate Drive Voltage: Operates at -1.8V to -4.5V, suitable for battery-powered devices.
- Compact Package: SOT-23-3, ideal for space-constrained designs.
- High Current Handling: Supports up to -4.3A continuous drain current.
Common uses include load switching, power distribution, and battery protection in portable electronics (e.g., smartphones, tablets). Its efficiency and small footprint make it a popular choice for modern low-power systems.
For detailed specs, refer to the datasheet on ON Semiconductor’s website.

Equivalent

Equivalent products to the NTR4003NT1G (N-channel MOSFET) include:
- DMN1019USN-7 (Diodes Incorporated)
- BSS138 (NXP/ON Semiconductor)
- 2N7002 (Various manufacturers)
- FDN337N (ON Semiconductor)
These alternatives offer similar specifications (e.g., 30V, 0.2A, SOT-23 package). Verify exact parameters for your application.

Pinout

The NTR4003NT1G is a P-channel MOSFET in a SOT-23 package with 3 pins (Gate, Source, Drain).
Key Functions:
- Gate (Pin 1): Controls the MOSFET's switching.
- Source (Pin 2): Connected to the input voltage (typically tied to the higher potential).
- Drain (Pin 3): Output connection, switches load current.
Specs:
- VDS: -30V
- ID: -4.3A (continuous)
- Low RDS(on): ~50mΩ (at VGS = -10V)
Commonly used for load switching, power management, and reverse polarity protection in compact designs.

Manufacturer

The NTR4003NT1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions. Known for reliability and innovation, onsemi provides components for applications such as electric vehicles, renewable energy, and IoT devices.
The NTR4003NT1G is a N-channel MOSFET designed for power switching applications.

Application

The NTR4003NT1G is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection in battery-powered systems.
3. DC-DC Converters – Efficient power conversion in automotive and industrial applications.
4. Load Switching – Controlling power distribution in consumer electronics.
5. Motor Control – Driving small motors in robotics and automation.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient designs.

Package

The NTR4003NT1G is a N-channel MOSFET from ON Semiconductor, available in a SOT-23-3 surface-mount package. This compact package is widely used for low-power applications, offering three leads (source, gate, drain) in a small footprint. It's suitable for space-constrained designs like portable electronics.

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