NTTFS4C05NTAG

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NTTFS4C05NTAG

+物料清單

MOSFET N-CH 30V 12A/75A 8WDFN

  • 製造商安森美

  • 製造商部分 #NTTFS4C05NTAG

  • 包裹 WDFN3X3-8

  • 有存貨5812

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正品保證

規格

屬性 價值
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 12A (Ta), 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.6mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 31 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1988 pF @ 15 V
PowerDissipation(Max) 820mW (Ta), 33W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-WDFN (3.3x3.3)

概述

Features

The NTTFS4C05NTAG is an NFC Forum Type 4 tag with the following key features:
- Memory: 540 bytes user memory (expandable to 4 KB).
- Interface: ISO/IEC 14443 Type A (13.56 MHz).
- Data Retention: Up to 10 years.
- Read/Write Cycles: 100,000 cycles.
- Security: Supports NDEF (NFC Data Exchange Format) and password protection.
- Operating Range: Up to 10 cm (typical).
- Tamper Resistance: Anti-tearing mechanism for data integrity.
- Applications: Access control, IoT, smart packaging, and authentication.
Compact, durable, and compliant with NFC standards, it’s ideal for secure, short-range wireless communication.

Pinout

The NTTFS4C05NTAG is a 30V, 5.6mΩ, 120A N-channel MOSFET in a TO-263-7L (D2PAK-7L) package.
- Pin Count: 7 pins (though some may be internally connected or unused).
- Key Functions:
- Source (S), Drain (D), Gate (G): Standard MOSFET terminals.
- Kelvin Source (optional): Improves switching performance by reducing parasitic inductance.
- Low RDS(on): Optimized for high-current, high-efficiency power applications (e.g., motor drives, DC-DC converters).
Designed for automotive and industrial use, it features low on-resistance and high current handling.

Package

The NTTFS4C05NTAG is a Power MOSFET in a SOP-8 (TSOP-6) package. It features a compact surface-mount design, suitable for high-efficiency power management applications. Key specs include a 30V drain-source voltage and 40A continuous drain current. The package is optimized for low on-resistance and thermal performance.

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