NTMFS4833NT1G

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NTMFS4833NT1G

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MOSFET N-CH 30V 16A/156A 5DFN

  • 製造商安森美

  • 製造商部分 #NTMFS4833NT1G

  • 包裹 TDFN-8

  • 有存貨4308

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規格

屬性 價值
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 16A (Ta), 156A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 2mOhm @ 30A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 88 nC @ 11.5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 5600 pF @ 12 V
Power Dissipation (Max) 910mW (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)

概述

Description

"NTMFS4833NT1G" is a specific part number for a semiconductor device produced by ON Semiconductor. This device is typically a MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. MOSFETs are critical components used in electronic circuits to switch and amplify electronic signals. The specific characteristics of the NTMFS4833NT1G include its voltage and current ratings, threshold voltage, and packaging type.
This MOSFET is designed for efficiency and reliability in power management applications, including power supplies, motor drives, and other electronic systems requiring efficient power control. It typically comes in a compact, surface-mount package, making it suitable for space-constrained applications. The key specifications such as ON-resistance, gate charge, and thermal resistance are optimized for performance in a variety of environments.
Always refer to the manufacturer's datasheet for detailed specifications and ensure compatibility with your application requirements. The datasheet provides insights into the electrical characteristics, thermal properties, and recommended operating conditions to ensure optimal performance.

Equivalent

The NTMFS4833NT1G is a power MOSFET produced by ON Semiconductor. Equivalent products from other manufacturers might include similar N-channel MOSFETs such as the IRFZ44N from Infineon Technologies, the FQP30N06L from ON Semiconductor (previously Fairchild Semiconductor), or the FDP6030BL from ON Semiconductor. When choosing an equivalent, ensure that key specifications like voltage rating, current handling, RDS(on), and package type match the original component. Always verify compatibility with the specific application requirements.

Features

The NTMFS4833NT1G is a power MOSFET designed by ON Semiconductor. It features advanced technology that provides low on-resistance and fast switching speeds, making it suitable for high-efficiency power management applications. Key features include:
1. Low On-Resistance: This MOSFET offers low R_DS(on), which reduces power loss and enhances efficiency.

2. Fast Switching: It supports rapid transition times, beneficial for high-frequency applications.

3. Thermal Performance: Designed to handle significant power loads with efficient thermal management.

4. Compact Package: Comes in a small, surface-mount package, saving space on PCBs.

5. High Power Capability: Suitable for applications requiring robust power handling.
6. Applications: Often used in DC-DC converters, power management systems, and motor control circuits.
These features make the NTMFS4833NT1G ideal for enhancing electronic device efficiency and reliability.

Pinout

The NTMFS4833NT1G is a MOSFET, specifically an N-channel MOSFET, manufactured by ON Semiconductor. It comes in a PowerPAK SO-8 package, which features a total of 8 pins. However, the functional pin count may typically be considered as 3 main terminals: Gate (G), Drain (D), and Source (S), with additional pins either being redundant or serving to enhance thermal and electrical performance.
The primary function of the NTMFS4833NT1G is to serve as a switch or amplifier in electronic circuits, handling high-speed switching applications. This MOSFET is designed for use in a variety of applications including power management and conversion circuits, due to its low on-state resistance and high-speed switching capability. Its compact package and efficient performance make it suitable for use in space-constrained applications. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.

Manufacturer

The NTMFS4833NT1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor supplier that primarily focuses on intelligent power and sensing technologies. The company provides a wide range of products, including power management solutions, sensors, and custom devices. They serve various markets such as automotive, industrial, cloud power, and Internet of Things (IoT).
Onsemi is known for its comprehensive end-to-end solutions that help customers improve energy efficiency, reduce global energy use, and create a more sustainable future. By developing systems that support automation and electrification, the company plays a significant role in advancing industries like electric vehicles, smart grids, and advanced computing.

Application

The NTMFS4833NT1G is a Power MOSFET designed for applications requiring efficient power management and high-speed switching. Its key application areas include:
1. DC-DC Converters: Used in power supply circuits to improve conversion efficiency and reduce power loss.
2. Motor Control: Suitable for controlling motors in consumer electronics and industrial applications.
3. Load Switches: Functions effectively as a switch in electronic devices for managing power distribution.
4. Power Management Systems: Integral in battery-powered devices to manage power use.
5. Telecommunications: Useful in base stations and communication infrastructure for reliable power handling.
These features make it ideal for applications demanding low on-state resistance and high-frequency operation.

Package

The NTMFS4833NT1G is a MOSFET with a Power 56 package type, often referred to as SO-8FL or 5x6mm FL. This surface-mount package is designed for efficient thermal performance and compact applications.

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