規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 46A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 16mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1400 pF @ 25 V |
| PowerDissipation(Max) | 71W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
概述
Description
The NTD5865NLT4G is an N-channel PowerTrench® MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Voltage Rating: 30V
- Current Capacity: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency DC-DC converters
- Package: D2PAK (TO-263) for robust thermal performance
Ideal for synchronous rectification, motor control, and load switching in industrial, automotive, and computing systems. Its low conduction losses and high current handling make it suitable for energy-efficient designs.
For detailed specs, refer to the datasheet.
- Voltage Rating: 30V
- Current Capacity: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency DC-DC converters
- Package: D2PAK (TO-263) for robust thermal performance
Ideal for synchronous rectification, motor control, and load switching in industrial, automotive, and computing systems. Its low conduction losses and high current handling make it suitable for energy-efficient designs.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NTD5865NLT4G (a P-channel MOSFET by ON Semiconductor) include:
- IRF9Z34N (Infineon)
- FQP27P06 (Fairchild/ON Semi)
- IRLML6401 (Infineon)
- SI2301DS (Vishay)
Check datasheets for exact specs (voltage, current, RDS(on)) before substitution.
- IRF9Z34N (Infineon)
- FQP27P06 (Fairchild/ON Semi)
- IRLML6401 (Infineon)
- SI2301DS (Vishay)
Check datasheets for exact specs (voltage, current, RDS(on)) before substitution.
Features
The NTD5865NLT4G is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 5.8mΩ (max) @ VGS=10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 125W
- Package: TO-252 (DPAK), surface-mount design
- Avalanche Energy Rated: Robust against inductive loads
- Applications: Power management, DC-DC converters, motor control
Designed for high efficiency and reliability in power electronics.
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 5.8mΩ (max) @ VGS=10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 125W
- Package: TO-252 (DPAK), surface-mount design
- Avalanche Energy Rated: Robust against inductive loads
- Applications: Power management, DC-DC converters, motor control
Designed for high efficiency and reliability in power electronics.
Manufacturer
The NTD5865NLT4G is a power MOSFET manufactured by ON Semiconductor (now known as onsemi).
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. They serve industries like automotive, industrial, and consumer electronics.
The NTD5865NLT4G is designed for high-efficiency power conversion applications.
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. They serve industries like automotive, industrial, and consumer electronics.
The NTD5865NLT4G is designed for high-efficiency power conversion applications.
Package
The NTD5865NLT4G is a PowerTrench MOSFET from ON Semiconductor, available in a DFN5 (5x6) package. This surface-mount package features a compact dual flat no-lead (DFN) design with dimensions of 5mm x 6mm, offering efficient thermal performance and space-saving benefits for power applications.
