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NTB45N06T4G
+物料清單MOSFET N-CH 60V 45A D2PAK
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規格
| 屬性 | 價值 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 45A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 26mOhm @ 22.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1725 pF @ 25 V |
| Power Dissipation (Max) | 2.4W (Ta), 125W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK |
概述
Description
NTB45N06T4G is an N‑channel enhancement MOSFET used as a high‑current power switch in power electronics. It’s rated around 60 V VDS and about 45 A continuous current, with a very low on‑resistance (Rds(on)) of roughly 0.045 Ω typical, helping minimize conduction losses. The T4G suffix denotes a RoHS, lead‑free, surface‑mount package variant (packaging type varies by厂) and traceability. Gate threshold is typically 2–4 V; for full enhancement a 10 V gate drive is common (some parts are logic‑level—check the datasheet). Advantages include fast switching, good dv/dt tolerance, and robust avalanche energy, making it suitable for DC‑DC converters, motor drivers, high/low‑side switching, and load switches. For exact specs, thermal data, package details, and pinout, consult the latest manufacturer datasheet.
Equivalent
NTB45N06T4G is a 60 V, 45 A N-channel MOSFET (Pb-free, D2PAK/TO-263). Typical cross equivalents include:
- IRFB45N06 (International Rectifier)
- STP45NF06L (STMicroelectronics)
- NTD45N06 (On Semiconductor)
Always verify exact package, pinout, and Rds(on) in the datasheet.
- IRFB45N06 (International Rectifier)
- STP45NF06L (STMicroelectronics)
- NTD45N06 (On Semiconductor)
Always verify exact package, pinout, and Rds(on) in the datasheet.
Features
NTB45N06T4G is an N‑channel enhancement MOSFET. Key features:
- Vds: 60 V; Id: 45 A (continuous)
- Low on-resistance: Rds(on) ≈ tens of milliohms (typical ~0.055 Ω at Vgs=10 V; max varies with temp)
- Gate drive: logic‑level capable (roughly Vgs ~1–4 V threshold, supports 4.5–10 V drive)
- Trench MOSFET technology for fast switching and low conduction losses
- Built‑in body diode; robust avalanche/rugged performance
- Pb‑free, RoHS compliant
- Package: D²PAK/TO‑263 (T4G) surface‑mount option
Applications: switching regulators, motor drives, DC-DC converters, automotive power electronics.
Note: exact electricals depend on temperature and conditions; refer to the datasheet for precise numbers.
- Vds: 60 V; Id: 45 A (continuous)
- Low on-resistance: Rds(on) ≈ tens of milliohms (typical ~0.055 Ω at Vgs=10 V; max varies with temp)
- Gate drive: logic‑level capable (roughly Vgs ~1–4 V threshold, supports 4.5–10 V drive)
- Trench MOSFET technology for fast switching and low conduction losses
- Built‑in body diode; robust avalanche/rugged performance
- Pb‑free, RoHS compliant
- Package: D²PAK/TO‑263 (T4G) surface‑mount option
Applications: switching regulators, motor drives, DC-DC converters, automotive power electronics.
Note: exact electricals depend on temperature and conditions; refer to the datasheet for precise numbers.
Pinout
- Pin count: 3 pins (Gate, Drain, Source); the exposed tab is also Drain (drain tab), so effectively 3 leads plus the tab.
- Function: N-channel enhancement-mode power MOSFET used for switching in power electronics (about 60V, ~45A rating).
- Function: N-channel enhancement-mode power MOSFET used for switching in power electronics (about 60V, ~45A rating).
Manufacturer
- Manufacturer: Nexperia.
- What kind of company: A Dutch global semiconductor company that designs and manufactures discrete components, including MOSFETs, diodes, and other electronic devices.
- What kind of company: A Dutch global semiconductor company that designs and manufactures discrete components, including MOSFETs, diodes, and other electronic devices.
Application
NTB45N06T4G is a N-channel MOSFET. Common application areas include:
- High-efficiency switching in DC-DC converters (buck/boost) and switching regulators
- Motor and actuator drives (DC motors, stepper motors, fans)
- Automotive and industrial power management and load switching
- Switching inductive loads (solenoids, relays)
- Inverters and solar-powered power electronics
- General PWM-based on/off switching in power supplies and consumer/industrial electronics
Used as a low-side or high-side switch with appropriate gate drive.
- High-efficiency switching in DC-DC converters (buck/boost) and switching regulators
- Motor and actuator drives (DC motors, stepper motors, fans)
- Automotive and industrial power management and load switching
- Switching inductive loads (solenoids, relays)
- Inverters and solar-powered power electronics
- General PWM-based on/off switching in power supplies and consumer/industrial electronics
Used as a low-side or high-side switch with appropriate gate drive.
Package
D2PAK (TO-263) surface-mount package.
