圖片僅供參考
規格
| 屬性 | 價值 |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | EA |
| Automotive | Unknown |
| PPAP | Unknown |
| Chip Density (bit) | 4G |
| Number of Bits / Word (bit) | 16 |
| Interface Type | LVSTL |
| Minimum Operating Supply Voltage (V) | 1.06|1.7 |
| Maximum Operating Supply Voltage (V) | 1.17|1.95 |
| Operating Current (m A) | 280 |
| Minimum Operating Temperature (°C) | -30 |
| Maximum Operating Temperature (°C) | 105 |
| Mounting Type | Surface Mount |
| Package Height | 0.48(Max) |
| Package Width | 10 |
| Package Length | 15 |
| PCB changed | 200 |
| Package / Case | BGA |
| Supplier Device Package | FBGA |
| Pin Count | 200 |
| DRAM Type | Mobile LPDDR4 SDRAM |
| Organization | 256Mx16 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 32M |
| Data Bus Width (bit) | 16 |
| Maximum Clock Rate (M Hz) | 3733 |
| Maximum Access Time (ns) | 3.6 |
| Address Bus Width (bit) | 18 |
| Number of I / O Lines (bit) | 16 |
| Supplier Temperature Grade | Commercial |
概述
Description
The NT6AN256M16AV-J2 is a dynamic random-access memory (DRAM) module, specifically a low-power DDR4 (LPDDR4) SDRAM, designed for high-performance and energy-efficient applications. It offers a storage capacity of 4Gb (gigabits) organized as 256M x 16 bits. This memory module is typically used in mobile devices, automotive applications, and other systems where power efficiency and performance are critical.
Key features of the NT6AN256M16AV-J2 include a high data transfer rate, low operating voltage, and advanced power management capabilities, making it ideal for devices requiring extended battery life. It operates at a voltage range of 1.1V, enhancing power efficiency compared to standard DDR4 modules. The module supports various power-saving modes, such as Deep Power Down and Self-Refresh, to further minimize power consumption when the memory is not in active use.
Overall, the NT6AN256M16AV-J2 is designed to meet the demands of modern applications that require fast, reliable, and energy-efficient memory solutions.
Key features of the NT6AN256M16AV-J2 include a high data transfer rate, low operating voltage, and advanced power management capabilities, making it ideal for devices requiring extended battery life. It operates at a voltage range of 1.1V, enhancing power efficiency compared to standard DDR4 modules. The module supports various power-saving modes, such as Deep Power Down and Self-Refresh, to further minimize power consumption when the memory is not in active use.
Overall, the NT6AN256M16AV-J2 is designed to meet the demands of modern applications that require fast, reliable, and energy-efficient memory solutions.
Equivalent
The NT6AN256M16AV-J2 is a DDR4 SDRAM chip with specific characteristics. Equivalent products would include other DDR4 SDRAM chips with similar specifications in terms of capacity, data rate, and voltage. Some equivalent manufacturers are Micron, Samsung, and SK Hynix, offering similar DDR4 memory products. Specific models may vary, so it's important to compare the detailed specifications such as the capacity (256Mb), organization (16M x 16), and speed grade to ensure compatibility.
Features
The NT6AN256M16AV-J2 is a DDR4 SDRAM chip with the following features:
1. Density and Organization: It has a density of 4Gb and is organized as 256M x 16.
2. Speed and Performance: Operates at a high-speed data rate of up to 2400 MT/s (megatransfers per second).
3. Voltage: Functions with a standard supply voltage of 1.2V.
4. Package: Available in a compact FBGA (Fine Ball Grid Array) package.
5. Burst Length: Supports burst lengths of 8 and 16 for efficient data handling.
6. Bank Architecture: Comprises 8 independent banks for better performance and data management.
7. Auto-Refresh and Self-Refresh: Includes auto-refresh and self-refresh modes for power management.
8. Temperature Range: Capable of operating in a wide temperature range, suitable for various applications.
9. Error Correction: Supports ECC (Error-Correcting Code) for improved data reliability.
These features make the NT6AN256M16AV-J2 suitable for a range of computing and electronic applications, requiring efficient data processing and reliability.
1. Density and Organization: It has a density of 4Gb and is organized as 256M x 16.
2. Speed and Performance: Operates at a high-speed data rate of up to 2400 MT/s (megatransfers per second).
3. Voltage: Functions with a standard supply voltage of 1.2V.
4. Package: Available in a compact FBGA (Fine Ball Grid Array) package.
5. Burst Length: Supports burst lengths of 8 and 16 for efficient data handling.
6. Bank Architecture: Comprises 8 independent banks for better performance and data management.
7. Auto-Refresh and Self-Refresh: Includes auto-refresh and self-refresh modes for power management.
8. Temperature Range: Capable of operating in a wide temperature range, suitable for various applications.
9. Error Correction: Supports ECC (Error-Correcting Code) for improved data reliability.
These features make the NT6AN256M16AV-J2 suitable for a range of computing and electronic applications, requiring efficient data processing and reliability.
Pinout
The NT6AN256M16AV-J2 is a DDR3 SDRAM chip manufactured by Nanya Technology. It features a 16-bit data width and operates with a 256M × 16 configuration, translating to 4 gigabits (Gb) of memory. The chip is packaged in a 96-ball FBGA (Fine-pitch Ball Grid Array) configuration.
The primary functions of the pins include:
- Data and Address Pins: These include DQ0-DQ15 for data input/output and A0-A14 for addressing.
- Control Pins: These include commands such as CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable).
- Clock and Power Pins: CK/CK# for clock signals, VDD/VSS for power supply, and VDDQ/VSSQ for DQ power supply.
- Other Pins: Include CKE (Clock Enable), ODT (On-Die Termination), and various NC (No Connect) pins.
This chip is primarily used in applications that require efficient, high-speed storage, such as PCs, networking devices, and servers.
The primary functions of the pins include:
- Data and Address Pins: These include DQ0-DQ15 for data input/output and A0-A14 for addressing.
- Control Pins: These include commands such as CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable).
- Clock and Power Pins: CK/CK# for clock signals, VDD/VSS for power supply, and VDDQ/VSSQ for DQ power supply.
- Other Pins: Include CKE (Clock Enable), ODT (On-Die Termination), and various NC (No Connect) pins.
This chip is primarily used in applications that require efficient, high-speed storage, such as PCs, networking devices, and servers.
Manufacturer
The NT6AN256M16AV-J2 is manufactured by Nanya Technology Corporation. Nanya Technology is a Taiwanese company that specializes in the design, development, and manufacturing of dynamic random-access memory (DRAM) products. Founded in 1995, Nanya is one of the leading DRAM suppliers globally and is part of the Formosa Plastics Group, which is one of the largest conglomerates in Taiwan. The company focuses on providing a wide range of memory solutions for applications in PCs, servers, mobile devices, and other electronic products.
Application
The NT6AN256M16AV-J2 is a low-power DRAM (Dynamic Random-Access Memory) module designed for high-performance and energy-efficient applications. Key application areas include:
1. Consumer Electronics: Enhancing performance in devices such as smartphones, tablets, and smart TVs.
2. Automotive Systems: Supporting advanced driver-assistance systems (ADAS) and infotainment systems.
3. Industrial Applications: Used in control systems and industrial automation for reliable data processing.
4. Networking Equipment: Improving data throughput in routers and switches.
5. IoT Devices: Providing efficient memory solutions for smart devices with limited power resources.
Its low power consumption and robust performance make it suitable for various demanding environments.
1. Consumer Electronics: Enhancing performance in devices such as smartphones, tablets, and smart TVs.
2. Automotive Systems: Supporting advanced driver-assistance systems (ADAS) and infotainment systems.
3. Industrial Applications: Used in control systems and industrial automation for reliable data processing.
4. Networking Equipment: Improving data throughput in routers and switches.
5. IoT Devices: Providing efficient memory solutions for smart devices with limited power resources.
Its low power consumption and robust performance make it suitable for various demanding environments.
Package
The NT6AN256M16AV-J2 is a DRAM component typically packaged in a standard FBGA (Fine-Pitch Ball Grid Array) format. The FBGA packaging is used to provide a compact and efficient design that facilitates improved thermal performance and high-density assembly on PCBs (Printed Circuit Boards).
