規格
| 屬性 | 價值 |
| Package / Case | Bulk,Tube |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 80 A |
| Current - Collector Pulsed(Icm) | 200 A |
| Vce(on)(Max) @ Vge Ic | 2.4V @ 15V, 40A |
| Power - Max | 535 W |
| Switching Energy | 3.4mJ (on), 1.1mJ (off) |
| Input Type | Standard |
| Gate Charge | 313 nC |
| Td(on / off) @ 25°C | 116ns/286ns |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 240 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
概述
Description
The NGTB40N120FL2WG is a high-performance 1200V, 40A IGBT from ON Semiconductor, designed for power switching applications. It features a fast switching speed, low saturation voltage (Vce(sat)), and robust short-circuit capability, making it suitable for inverters, motor drives, and industrial power systems.
Key specifications:
- Voltage (Vces): 1200V
- Current (Ic): 40A (continuous)
- Low Vce(sat): 1.85V (typical)
- Fast switching: Optimized for efficiency
- Package: TO-247 (isolated)
The device includes a co-packaged anti-parallel diode for improved reliability in inductive load applications. Its low thermal resistance and high ruggedness ensure stable performance in demanding environments.
Ideal for:
- Motor control
- Solar inverters
- UPS systems
- Welding equipment
For detailed specs, refer to the datasheet.
Key specifications:
- Voltage (Vces): 1200V
- Current (Ic): 40A (continuous)
- Low Vce(sat): 1.85V (typical)
- Fast switching: Optimized for efficiency
- Package: TO-247 (isolated)
The device includes a co-packaged anti-parallel diode for improved reliability in inductive load applications. Its low thermal resistance and high ruggedness ensure stable performance in demanding environments.
Ideal for:
- Motor control
- Solar inverters
- UPS systems
- Welding equipment
For detailed specs, refer to the datasheet.
Features
The NGTB40N120FL2WG is a 1200V, 40A IGBT with a co-packaged anti-parallel diode, designed for high-efficiency power applications. Key features include:
- Low VCE(sat) (1.85V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, improving efficiency.
- High current capability (40A continuous, 80A pulsed).
- Temperature stability with a wide operating range (-55°C to +175°C).
- Co-packaged diode for simplified design in inverter/rectifier circuits.
- Low EMI due to optimized switching characteristics.
- TO-247-4L package with Kelvin emitter for better gate control.
Ideal for motor drives, UPS, and renewable energy systems.
- Low VCE(sat) (1.85V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, improving efficiency.
- High current capability (40A continuous, 80A pulsed).
- Temperature stability with a wide operating range (-55°C to +175°C).
- Co-packaged diode for simplified design in inverter/rectifier circuits.
- Low EMI due to optimized switching characteristics.
- TO-247-4L package with Kelvin emitter for better gate control.
Ideal for motor drives, UPS, and renewable energy systems.
Pinout
The NGTB40N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) module with the following key specifications:
- Pin Count: Typically 3 main terminals (Collector, Emitter, Gate) plus auxiliary connections (e.g., temperature sensor, Kelvin emitter) depending on the package.
- Function: Designed for high-power switching applications (e.g., inverters, motor drives).
- Voltage Rating: 1200V
- Current Rating: 40A (continuous)
- Low VCE(sat) for efficient conduction.
- Fast switching with robust short-circuit capability.
Exact pin configuration varies by package (e.g., TO-247, 4-pin for Kelvin emitter). Refer to the datasheet for precise details.
- Pin Count: Typically 3 main terminals (Collector, Emitter, Gate) plus auxiliary connections (e.g., temperature sensor, Kelvin emitter) depending on the package.
- Function: Designed for high-power switching applications (e.g., inverters, motor drives).
- Voltage Rating: 1200V
- Current Rating: 40A (continuous)
- Low VCE(sat) for efficient conduction.
- Fast switching with robust short-circuit capability.
Exact pin configuration varies by package (e.g., TO-247, 4-pin for Kelvin emitter). Refer to the datasheet for precise details.
Application
The NGTB40N120FL2WG is a high-power IGBT module designed for demanding applications, including:
- Industrial Motor Drives: Used in variable-speed drives for pumps, compressors, and conveyors.
- Renewable Energy: Inverters for solar and wind power systems.
- Electric Vehicles (EVs): Power conversion in traction inverters and charging stations.
- Welding Equipment: High-efficiency power supplies for arc and resistance welding.
- UPS Systems: Ensures reliable power backup in data centers and critical infrastructure.
Its high voltage (1200V) and current (40A) ratings, along with low switching losses, make it ideal for energy-efficient and high-performance power electronics.
- Industrial Motor Drives: Used in variable-speed drives for pumps, compressors, and conveyors.
- Renewable Energy: Inverters for solar and wind power systems.
- Electric Vehicles (EVs): Power conversion in traction inverters and charging stations.
- Welding Equipment: High-efficiency power supplies for arc and resistance welding.
- UPS Systems: Ensures reliable power backup in data centers and critical infrastructure.
Its high voltage (1200V) and current (40A) ratings, along with low switching losses, make it ideal for energy-efficient and high-performance power electronics.
