SGF23N60UFTU

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SGF23N60UFTU

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IGBT 600V 23A TO3PF

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規格

屬性 價值
Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 23 A
Current-CollectorPulsed(Icm) 92 A
Vce(on)(Max)@VgeIc 2.6V @ 15V, 12A
Power-Max 75 W
SwitchingEnergy 115µJ (on), 135µJ (off)
InputType Standard
Td(on/off)@25°C 17ns/60ns
TestCondition 300V, 12A, 23Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3 Full Pack

概述

Description

The SGF23N60UFTU is a type of power MOSFET, a semiconductor device used for switching and amplifying electronic signals in a variety of applications. It is manufactured by a specific semiconductor company and is designed for high-efficiency performance in power management applications. This MOSFET features a voltage rating of 600V and a current rating of 23A, making it suitable for demanding environments that require efficient power conversion and management.
Key characteristics of the SGF23N60UFTU include low on-resistance, which minimizes energy loss during operation, and fast switching speeds, which improve overall system performance. These features make it an ideal choice for applications such as power supplies, motor drives, and industrial equipment. The device is typically housed in a TO-220 or TO-247 package, which allows for effective heat dissipation and easy integration into various electronic systems.
Overall, the SGF23N60UFTU is valued for its reliability, efficiency, and ability to handle high voltages and currents, making it a common choice in high-power electronic applications.

Equivalent

The SGF23N60UFTU is a power MOSFET. Equivalent products would typically be other N-channel MOSFETs with similar specifications: 600V voltage rating, 23A current rating, and similar RDS(on) values. Possible equivalents include the STMicroelectronics STP24N60M2 Infineon IPP60R199CP, and ON Semiconductor FDPF33N25TAlways compare specific parameters and consult datasheets to ensure compatibility.

Features

The SGF23N60UFTU is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. N-Channel MOSFET: It is an N-channel MOSFET, suitable for applications requiring fast switching and enhanced conductivity.
2. Voltage and Current Ratings: The MOSFET typically supports a high drain-source voltage and a specific continuous current rating, making it suitable for handling significant power loads.
3. RDS(on): It features a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency during operation.
4. Fast Switching: Designed for fast switching speeds, it helps in reducing switching losses, making it ideal for applications like power supplies and converters.
5. Thermal Performance: The component usually offers good thermal performance, often with a package that aids in heat dissipation.
6. Robust Design: It typically includes features for robustness against voltage spikes and surges, enhancing reliability in various environments.
7. Applications: Commonly used in industrial applications, power management systems, inverters, and other areas where efficient power conversion is critical.
Make sure to refer to the official datasheet for precise specifications and characteristics.

Pinout

The SGF23N60UFTU is a power MOSFET designed for high voltage applications. It typically comes in a TO-220 or similar package, which generally features three pins: Gate, Drain, and Source.
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off, allowing current to flow or be blocked between the drain and source.
2. Drain (D): Current flows from the drain to the source when the MOSFET is turned on. This pin is connected to the load that the MOSFET is controlling.
3. Source (S): This pin completes the circuit within the MOSFET. It is typically connected to ground in many applications.
The SGF23N60UFTU is known for its high voltage capability (600V) and is often used in power supply, inverter, and motor control applications due to its efficiency and reliability. Always refer to the datasheet for the exact specifications and pin configuration, as variations can exist.

Manufacturer

The SGF23N60UFTU is a product manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company provides a wide range of products including diodes, MOSFETs, power ICs, capacitors, resistors, and inductors, which are used in various applications across multiple industries such as automotive, consumer electronics, industrial, telecommunications, and computing. Vishay's products are integral in the functioning of electronic circuits and systems, making them a key player in the electronics supply chain.

Application

The SGF23N60UFTU is a power MOSFET designed for high-efficiency applications. It is commonly used in:
1. Switch Mode Power Supplies (SMPS): It helps improve efficiency and reduce power loss.
2. Motor Drives: It is suitable for driving motors in industrial and consumer applications.
3. Inverters: Utilized in solar inverters and other energy conversion systems.
4. Lighting: Used in LED lighting systems for efficient power management.
5. Automotive: Suitable for use in automotive electronic systems requiring efficient power handling.
These applications benefit from the MOSFET’s low on-resistance and high-speed switching capabilities.

Package

The SGF23N60UFTU is a SuperFET II MOSFET from Fairchild Semiconductor (now part of ON Semiconductor) typically available in a TO-220F package. This package is a three-lead, through-hole design known for its effective heat dissipation.

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