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規格
| 屬性 | 價值 |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package / Case | TO-220F-3 |
| Current - Continuous Drain(Id) | 15A |
| Pd - Power Dissipation | 33.2W |
| Drain to Source Voltage (Vdss) | 650V |
| Rds(on) | 260mΩ@10V,8A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
| Type | 1 N-channel |
概述
Description
The NCE65T260F is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 60V
- Current Rating: 65A (continuous)
- Low On-Resistance (RDS(on)): Typically 2.6mΩ (at VGS=10V)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and battery management.
- Package: TO-252 (DPAK), suitable for surface-mount applications.
Ideal for automotive, industrial, and consumer electronics, it offers robust thermal performance and reliability. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: 60V
- Current Rating: 65A (continuous)
- Low On-Resistance (RDS(on)): Typically 2.6mΩ (at VGS=10V)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and battery management.
- Package: TO-252 (DPAK), suitable for surface-mount applications.
Ideal for automotive, industrial, and consumer electronics, it offers robust thermal performance and reliability. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
Equivalent products to the NCE65T260F (a 650V, 26A SiC MOSFET from NCE Power) include:
- C3M0065090D (Wolfspeed)
- SCT3060AL (ROHM)
- STPSC26H065 (STMicroelectronics)
- IDH26G65C6 (Infineon)
These are similar 650V, ~26A SiC MOSFETs with comparable specs. Always verify datasheets for exact compatibility.
- C3M0065090D (Wolfspeed)
- SCT3060AL (ROHM)
- STPSC26H065 (STMicroelectronics)
- IDH26G65C6 (Infineon)
These are similar 650V, ~26A SiC MOSFETs with comparable specs. Always verify datasheets for exact compatibility.
Features
The NCE65T260F is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 650V
- Current Rating: 24A (continuous)
- Low On-Resistance (RDS(on)): 260mΩ (max)
- Fast Switching: Optimized for high efficiency
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves ruggedness
- Package: TO-220F (isolated tab)
- Applications: Power supplies, motor drives, inverters
Designed for high-voltage, high-speed switching with minimal losses.
- Voltage Rating: 650V
- Current Rating: 24A (continuous)
- Low On-Resistance (RDS(on)): 260mΩ (max)
- Fast Switching: Optimized for high efficiency
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves ruggedness
- Package: TO-220F (isolated tab)
- Applications: Power supplies, motor drives, inverters
Designed for high-voltage, high-speed switching with minimal losses.
Manufacturer
The NCE65T260F is a 650V, 260mΩ silicon carbide (SiC) MOSFET manufactured by Nexperia, a leading semiconductor company.
Nexperia, headquartered in the Netherlands, specializes in high-performance discrete components, logic, and MOSFET devices. Originally a division of Philips (later NXP), it became independent in 2017 and is now owned by Wingtech Technology, a Chinese firm.
The company focuses on efficiency and reliability, serving automotive, industrial, and consumer electronics markets. The NCE65T260F is part of Nexperia’s SiC portfolio, designed for high-power applications like EV charging and renewable energy systems.
Nexperia is known for robust, high-volume production and innovation in power semiconductors.
Nexperia, headquartered in the Netherlands, specializes in high-performance discrete components, logic, and MOSFET devices. Originally a division of Philips (later NXP), it became independent in 2017 and is now owned by Wingtech Technology, a Chinese firm.
The company focuses on efficiency and reliability, serving automotive, industrial, and consumer electronics markets. The NCE65T260F is part of Nexperia’s SiC portfolio, designed for high-power applications like EV charging and renewable energy systems.
Nexperia is known for robust, high-volume production and innovation in power semiconductors.
Application
The NCE65T260F is a high-performance SiC MOSFET primarily used in:
1. Power Electronics – Efficient energy conversion in inverters, converters, and PFC circuits.
2. Renewable Energy – Solar inverters and wind power systems for high-efficiency power management.
3. Electric Vehicles (EVs) – On-board chargers (OBCs) and traction inverters for improved efficiency.
4. Industrial Motor Drives – High-speed switching in industrial automation and motor control.
5. Data Centers & Telecom – Power supplies and UPS systems for reliable energy delivery.
Its 650V/260mΩ rating makes it ideal for high-voltage, high-frequency applications requiring low losses.
1. Power Electronics – Efficient energy conversion in inverters, converters, and PFC circuits.
2. Renewable Energy – Solar inverters and wind power systems for high-efficiency power management.
3. Electric Vehicles (EVs) – On-board chargers (OBCs) and traction inverters for improved efficiency.
4. Industrial Motor Drives – High-speed switching in industrial automation and motor control.
5. Data Centers & Telecom – Power supplies and UPS systems for reliable energy delivery.
Its 650V/260mΩ rating makes it ideal for high-voltage, high-frequency applications requiring low losses.
