圖片僅供參考
規格
| 屬性 | 價值 |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23-3L |
| OperatingTemperature | -55℃~+150℃ |
| Current-ContinuousDrain(Id) | 4A |
| Pd-PowerDissipation | 1.5W |
| DraintoSourceVoltage | 60V |
| RDS(on) | 120mΩ@10V,4A |
| GateThresholdVoltage(Vgs(th)@Id) | 1.5V |
| Type | 1 piece P-channel |
| GateCharge(Qg) | 25nC |
| InputCapacitance(Ciss@Vds) | 930pF@30V |
| ReverseTransferCapacitance(Crss@Vds) | 35pF@30V |
概述
Description
The NCE60P04Y is a P-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: -60V (Drain-to-Source, VDS)
- Current Handling: -60A (Continuous Drain Current, ID)
- Low On-Resistance: 4.5mΩ (typical at VGS = -10V)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Package: TO-252 (DPAK), ensuring good thermal performance.
It is commonly used in battery protection, power supplies, and automotive systems due to its low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: -60V (Drain-to-Source, VDS)
- Current Handling: -60A (Continuous Drain Current, ID)
- Low On-Resistance: 4.5mΩ (typical at VGS = -10V)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Package: TO-252 (DPAK), ensuring good thermal performance.
It is commonly used in battery protection, power supplies, and automotive systems due to its low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
The NCE60P04Y is a 60V, 40A P-channel MOSFET. Equivalent alternatives include:
- IRF4905 (55V, 74A)
- FQP47P06 (60V, 47A)
- STP55P06 (60V, 55A)
- AOD4185 (60V, 40A)
Check datasheets for exact specs like RDS(on) and gate charge to ensure compatibility.
- IRF4905 (55V, 74A)
- FQP47P06 (60V, 47A)
- STP55P06 (60V, 55A)
- AOD4185 (60V, 40A)
Check datasheets for exact specs like RDS(on) and gate charge to ensure compatibility.
Features
The NCE60P04Y is a P-channel MOSFET with the following key features:
- Voltage Rating: -40V (Drain-to-Source, VDS)
- Current Rating: -60A (Continuous Drain Current, ID)
- Low On-Resistance: 8.5mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -3V
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss)
- Package: TO-252 (DPAK), surface-mount
- Applications: Power management, motor control, DC-DC converters
Designed for high efficiency and thermal performance, it’s suitable for high-current, low-voltage switching circuits.
- Voltage Rating: -40V (Drain-to-Source, VDS)
- Current Rating: -60A (Continuous Drain Current, ID)
- Low On-Resistance: 8.5mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -3V
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss)
- Package: TO-252 (DPAK), surface-mount
- Applications: Power management, motor control, DC-DC converters
Designed for high efficiency and thermal performance, it’s suitable for high-current, low-voltage switching circuits.
Pinout
The NCE60P04Y is a P-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-252/DPAK package: Gate, Drain, Source)
- Function: Power switching in applications like motor control, power supplies, and load switches.
- Voltage Rating: -40V (Drain-Source)
- Current Rating: -60A (continuous drain current)
- Low On-Resistance (RDS(on)): ~6.5mΩ (at VGS = -10V)
It is commonly used for high-efficiency, low-loss switching in DC-DC converters and battery management systems.
- Pin Count: 3 (TO-252/DPAK package: Gate, Drain, Source)
- Function: Power switching in applications like motor control, power supplies, and load switches.
- Voltage Rating: -40V (Drain-Source)
- Current Rating: -60A (continuous drain current)
- Low On-Resistance (RDS(on)): ~6.5mΩ (at VGS = -10V)
It is commonly used for high-efficiency, low-loss switching in DC-DC converters and battery management systems.
Manufacturer
The NCE60P04Y is a 60V, 40A P-channel MOSFET manufactured by NCE Power Semiconductor, a Chinese company specializing in power semiconductor devices.
NCE Power Semiconductor focuses on designing and producing MOSFETs, IGBTs, and power management ICs, primarily for applications like power supplies, motor control, and automotive electronics. The company is known for offering cost-effective alternatives to established brands like Infineon and STMicroelectronics.
Founded in 2004 and headquartered in Wuxi, China, NCE serves global markets with a strong emphasis on industrial and consumer electronics. Their products are widely used in battery management, inverters, and LED lighting.
For detailed specifications, refer to NCE’s official datasheets or authorized distributors.
NCE Power Semiconductor focuses on designing and producing MOSFETs, IGBTs, and power management ICs, primarily for applications like power supplies, motor control, and automotive electronics. The company is known for offering cost-effective alternatives to established brands like Infineon and STMicroelectronics.
Founded in 2004 and headquartered in Wuxi, China, NCE serves global markets with a strong emphasis on industrial and consumer electronics. Their products are widely used in battery management, inverters, and LED lighting.
For detailed specifications, refer to NCE’s official datasheets or authorized distributors.
Package
The NCE60P04Y is a Power MOSFET housed in a TO-252 (DPAK) surface-mount package. This package type offers efficient thermal performance and compact size, suitable for high-current applications. It features three pins (gate, drain, source) and a metal tab for heat dissipation. Commonly used in power management, switching circuits, and automotive electronics.
