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規格
| 屬性 | 價值 |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package / Case | SOIC-8 |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 5.1A |
| Pd - Power Dissipation | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Rds(on) | 55mΩ@10V,5.1A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 1.6V |
| Type | 2 P-Channel |
| Gate Charge(Qg) | 11nC |
| Input Capacitance(Ciss @ Vds) | 520pF@15V |
| Reverse Transfer Capacitance (Crss @ Vds) | 70pF |
概述
Equivalent
The NCE4953 is a dual P-channel MOSFET. Equivalent or similar products include:
- FDS4953 (Fairchild/ON Semiconductor)
- SI4953DY (Vishay)
- NDP4953 (ON Semiconductor)
- AP4953 (Diodes Incorporated)
- IRF4953PbF (Infineon)
These alternatives offer comparable specifications (e.g., -30V, -5.5A) and are often pin-compatible. Verify datasheets for exact compatibility.
- FDS4953 (Fairchild/ON Semiconductor)
- SI4953DY (Vishay)
- NDP4953 (ON Semiconductor)
- AP4953 (Diodes Incorporated)
- IRF4953PbF (Infineon)
These alternatives offer comparable specifications (e.g., -30V, -5.5A) and are often pin-compatible. Verify datasheets for exact compatibility.
Pinout
The NCE4953 is a dual P-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Source 1 (S1) – Pins 1, 2, 3 (connected internally)
2. Gate 1 (G1) – Pin 4
3. Gate 2 (G2) – Pin 5
4. Source 2 (S2) – Pins 6, 7, 8 (connected internally)
5. Drain 1 (D1) – Internally connected to the first MOSFET
6. Drain 2 (D2) – Internally connected to the second MOSFET
Key Features:
- Dual MOSFET (two independent P-channel FETs)
- High current handling (typically used in power switching)
- Low on-resistance (RDS(on))
Commonly used in motor drivers, power management, and load switching.
Pin Functions:
1. Source 1 (S1) – Pins 1, 2, 3 (connected internally)
2. Gate 1 (G1) – Pin 4
3. Gate 2 (G2) – Pin 5
4. Source 2 (S2) – Pins 6, 7, 8 (connected internally)
5. Drain 1 (D1) – Internally connected to the first MOSFET
6. Drain 2 (D2) – Internally connected to the second MOSFET
Key Features:
- Dual MOSFET (two independent P-channel FETs)
- High current handling (typically used in power switching)
- Low on-resistance (RDS(on))
Commonly used in motor drivers, power management, and load switching.
Application
The NCE4953 is a dual N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits for driving brushed DC motors.
3. Load Switching – Efficiently controls high-current loads in industrial/consumer electronics.
4. Battery Protection – Used in battery management systems (BMS) for discharge control.
5. LED Drivers – Powers high-brightness LED arrays.
Its low on-resistance (RDS(on)) and high current handling make it ideal for energy-efficient switching applications.
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits for driving brushed DC motors.
3. Load Switching – Efficiently controls high-current loads in industrial/consumer electronics.
4. Battery Protection – Used in battery management systems (BMS) for discharge control.
5. LED Drivers – Powers high-brightness LED arrays.
Its low on-resistance (RDS(on)) and high current handling make it ideal for energy-efficient switching applications.
Package
The NCE4953 is typically available in a SOIC-8 (Small Outline Integrated Circuit) package. This surface-mount package is compact, with 8 pins, and is commonly used for power MOSFETs. It offers good thermal performance and is suitable for applications like motor drivers or power management. For exact dimensions, refer to the datasheet.
