NCE30P25S

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NCE30P25S

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  • 製造商部分 #NCE30P25S

  • 數據表 NCE30P25S DataSheet

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規格

屬性 價值
Manufacturer Wuxi NCE Power Semiconductor
Package / Case SOIC-8
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 25A
Pd - Power Dissipation 3.5W
Drain to Source Voltage (Vdss) 30V
Rds(on) 9mΩ@10V,15A
Type 1 piece P-channel
Gate Charge(Qg) 65nC
Input Capacitance(Ciss @ Vds) 3.96nF@15V
Reverse Transfer Capacitance (Crss @ Vds) 268pF

概述

Description

The NCE30P25S is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 30V
- Current Rating: 25A (continuous)
- Low On-Resistance (RDS(on)): Typically 8.5mΩ (at VGS=10V)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor drives, and load switches.
- Package: TO-252 (DPAK) for good thermal performance.
Ideal for battery protection, power supplies, and automotive systems, it balances efficiency and robustness. Always refer to the datasheet for detailed specifications.

Equivalent

The NCE30P25S is a 30V, 25A P-channel MOSFET. Equivalent or similar products include:
- Infineon IPD90P04P4L-04 (40V, 25A)
- Vishay Si7469DP (30V, 25A)
- ON Semiconductor NVTFS5C604NL (60V, 30A, but higher voltage)
- STMicroelectronics STP80PF55 (55V, 80A, higher current)
Check datasheets for exact compatibility in your application.

Features

The NCE30P25S is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 25V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): Typically 8.5mΩ (at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Low Gate Charge (Qg): Enhances switching performance
- Avalanche Energy Rated: Improves reliability in rugged conditions
- Package: TO-252 (DPAK), suitable for surface-mount applications
- Applications: Power management, DC-DC converters, motor control, and battery protection
Its low RDS(on) and high current capability make it ideal for high-power, low-loss designs.

Pinout

The NCE30P25S is a 30V, 25A N-channel MOSFET in a TO-263-3 (D2PAK) package with 3 pins:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high current path).
3. Source (S): Ground/reference terminal.
Key Features:
- Low on-resistance (RDS(on) = ~3.7mΩ max at VGS=10V).
- High current handling (25A continuous).
- Suitable for power switching in DC-DC converters, motor drives, and battery management.
Note: Pinout aligns with standard D2PAK configuration (left to right: G, D, S when facing the tab).

Package

The NCE30P25S is a 30A, 25V N-channel MOSFET in a TO-252 (DPAK) surface-mount package. It features low on-resistance and fast switching, suitable for power management applications. The package is compact, with a single gull-wing lead and a thermal pad for heat dissipation.