規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 500mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 200mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 60 pF @ 10 V |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
概述
Description
The MMBF170LT1G is a N-channel enhancement-mode MOSFET transistor manufactured by ON Semiconductor. It is commonly used in various electronic applications due to its small form factor and efficient performance characteristics. Key features include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of approximately 200mA. The device operates efficiently with a low gate threshold voltage, making it suitable for low-power applications.
The MMBF170LT1G is typically housed in a compact SOT-23 package, which allows for space-saving in circuit designs. It is favored in applications such as switching, signal processing, and amplification in consumer electronics, automotive, and industrial systems. Its high-speed switching capability is essential for efficient power management in these applications.
With its combination of reliability, compact packaging, and versatile performance, the MMBF170LT1G is a popular choice for designers looking to implement efficient, low-power solutions in their electronic circuits.
The MMBF170LT1G is typically housed in a compact SOT-23 package, which allows for space-saving in circuit designs. It is favored in applications such as switching, signal processing, and amplification in consumer electronics, automotive, and industrial systems. Its high-speed switching capability is essential for efficient power management in these applications.
With its combination of reliability, compact packaging, and versatile performance, the MMBF170LT1G is a popular choice for designers looking to implement efficient, low-power solutions in their electronic circuits.
Equivalent
The MMBF170LT1G is an N-channel MOSFET used for switching applications. Equivalent products include the 2N7002, BSS138, and PMV20XN, which are also small-signal N-channel MOSFETs with similar characteristics. Ensure to verify the specific electrical parameters and packaging requirements to confirm compatibility in your application.
Features
The MMBF170LT1G is an N-channel MOSFET designed for general-purpose switching applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 60V, which makes it suitable for various medium-voltage applications.
2. Current Capacity: The continuous drain current (I_D) it can handle is approximately 200mA.
3. Low On-State Resistance: This MOSFET offers low R_DS(on), which minimizes power loss and improves efficiency.
4. Gate-Source Voltage: It supports a gate-source voltage (V_GS) of ±20V.
5. Small Package: It comes in a compact SOT-23 package, which is beneficial for space-constrained designs.
6. Fast Switching: The device is capable of fast switching speeds, which is advantageous for high-speed applications.
7. Enhanced ESD Protection: It includes built-in ESD protection to safeguard against electrostatic discharges.
8. RoHS Compliant: The MMBF170LT1G is compliant with RoHS standards, ensuring it is free from hazardous substances.
These features make it an ideal choice for a variety of applications, including signal switching, level shifting, and load switching in consumer electronics.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 60V, which makes it suitable for various medium-voltage applications.
2. Current Capacity: The continuous drain current (I_D) it can handle is approximately 200mA.
3. Low On-State Resistance: This MOSFET offers low R_DS(on), which minimizes power loss and improves efficiency.
4. Gate-Source Voltage: It supports a gate-source voltage (V_GS) of ±20V.
5. Small Package: It comes in a compact SOT-23 package, which is beneficial for space-constrained designs.
6. Fast Switching: The device is capable of fast switching speeds, which is advantageous for high-speed applications.
7. Enhanced ESD Protection: It includes built-in ESD protection to safeguard against electrostatic discharges.
8. RoHS Compliant: The MMBF170LT1G is compliant with RoHS standards, ensuring it is free from hazardous substances.
These features make it an ideal choice for a variety of applications, including signal switching, level shifting, and load switching in consumer electronics.
Pinout
The MMBF170LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used for switching and amplification purposes. It comes in a SOT-23 package, which typically has 3 pins. The pin configuration for the MMBF170LT1G is as follows:
1. Gate (G): This is the control terminal. By applying voltage here, you can control the flow of current between the source and the drain.
2. Source (S): This is the terminal where the carriers enter the channel. It is generally connected to the ground or a lower voltage point.
3. Drain (D): This is the terminal where the carriers leave the channel. It is connected to the load or a higher voltage point.
The MMBF170LT1G is used in various applications for switching electronic signals and amplifying current, primarily in low-power, high-frequency applications due to its small package size and efficient operation.
1. Gate (G): This is the control terminal. By applying voltage here, you can control the flow of current between the source and the drain.
2. Source (S): This is the terminal where the carriers enter the channel. It is generally connected to the ground or a lower voltage point.
3. Drain (D): This is the terminal where the carriers leave the channel. It is connected to the load or a higher voltage point.
The MMBF170LT1G is used in various applications for switching electronic signals and amplifying current, primarily in low-power, high-frequency applications due to its small package size and efficient operation.
Manufacturer
The MMBF170LT1G is manufactured by ON Semiconductor, a company known for producing semiconductors and electronic components. ON Semiconductor, now known as onsemi, is a leading supplier in the electronics industry, providing a wide range of products including power and signal management, logic, discrete, and custom devices. They serve various sectors such as automotive, industrial, communications, computing, and consumer electronics. The company is recognized for its focus on energy-efficient innovations and solutions, which help reduce global energy usage.
Application
The MMBF170LT1G is an N-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Switching Applications: Used for switching in low-power circuits due to its efficient voltage control.
2. Signal Amplification: Employed in amplifying signals in RF and analog circuits.
3. Load Switching: Suitable for controlling small loads in power management systems.
4. Level Shifting: Used in circuits requiring voltage level shifting.
5. Battery-Powered Devices: Ideal for portable devices due to its low power consumption.
6. Digital Circuits: Integrated into logic level conversion and interfacing.
These diverse applications make the MMBF170LT1G a versatile component in electronic design.
1. Switching Applications: Used for switching in low-power circuits due to its efficient voltage control.
2. Signal Amplification: Employed in amplifying signals in RF and analog circuits.
3. Load Switching: Suitable for controlling small loads in power management systems.
4. Level Shifting: Used in circuits requiring voltage level shifting.
5. Battery-Powered Devices: Ideal for portable devices due to its low power consumption.
6. Digital Circuits: Integrated into logic level conversion and interfacing.
These diverse applications make the MMBF170LT1G a versatile component in electronic design.
Package
The MMBF170LT1G is a N-channel MOSFET with a package type of SOT-23.
