規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR) |
| ProductStatus | Obsolete |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 3 A |
| Voltage-CollectorEmitterBreakdown(Max) | 100 V |
| VceSaturation(Max)@IbIc | 1.2V @ 375mA, 3A |
| Current-CollectorCutoff(Max) | 50µA |
| DCCurrentGain(hFE)(Min)@IcVce | 10 @ 3A, 4V |
| Power-Max | 15 W |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
概述
Features
The MJD31C is an NPN Darlington transistor with the following key features:
- High Current Gain (hFE): Typically 1000, making it suitable for low-power amplification and switching.
- Collector Current (IC): Up to 3A, handling moderate loads.
- Collector-Emitter Voltage (VCEO): 100V, supporting medium-voltage applications.
- Power Dissipation (Ptot): 30W, with proper heat sinking.
- Darlington Pair Configuration: Enhances sensitivity for small input signals.
- TO-252 (DPAK) Package: Compact and surface-mountable.
Commonly used in relay drivers, motor control, and power regulators. Requires a heat sink for high-current operation.
- High Current Gain (hFE): Typically 1000, making it suitable for low-power amplification and switching.
- Collector Current (IC): Up to 3A, handling moderate loads.
- Collector-Emitter Voltage (VCEO): 100V, supporting medium-voltage applications.
- Power Dissipation (Ptot): 30W, with proper heat sinking.
- Darlington Pair Configuration: Enhances sensitivity for small input signals.
- TO-252 (DPAK) Package: Compact and surface-mountable.
Commonly used in relay drivers, motor control, and power regulators. Requires a heat sink for high-current operation.
Manufacturer
The MJD31C is a PNP bipolar transistor manufactured by ON Semiconductor, a leading global supplier of power management, analog, and semiconductor solutions. ON Semiconductor specializes in energy-efficient technologies for automotive, industrial, and consumer applications. The company is known for high-reliability components, including transistors, diodes, and integrated circuits.
The MJD31C is commonly used in power amplification and switching circuits, reflecting ON Semiconductor's expertise in robust, performance-driven electronics.
The MJD31C is commonly used in power amplification and switching circuits, reflecting ON Semiconductor's expertise in robust, performance-driven electronics.
Application
The MJD31C is a PNP bipolar junction transistor (BJT) commonly used in:
1. Switching Circuits – For load control in relays, LEDs, and motors.
2. Amplification – In audio and signal amplification stages.
3. Power Management – Voltage regulation and power supply circuits.
4. Automotive Electronics – Engine control, lighting, and sensors.
5. Consumer Electronics – TVs, audio systems, and appliances.
Its high current (3A) and voltage (100V) ratings make it suitable for medium-power applications.
1. Switching Circuits – For load control in relays, LEDs, and motors.
2. Amplification – In audio and signal amplification stages.
3. Power Management – Voltage regulation and power supply circuits.
4. Automotive Electronics – Engine control, lighting, and sensors.
5. Consumer Electronics – TVs, audio systems, and appliances.
Its high current (3A) and voltage (100V) ratings make it suitable for medium-power applications.
Package
The MJD31C is a TO-252 (DPAK) surface-mount package, commonly used for power transistors. It features a compact design with a heat-dissipating tab for efficient thermal management. Suitable for high-current applications, it is widely used in power supplies, motor control, and automotive electronics. The package dimensions are typically around 6.5mm x 6.1mm x 2.3mm.
