規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 1.2A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 250µA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 140 pF @ 5 V |
| Power Dissipation (Max) | 420mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
概述
Description
The MGSF1N03LT1G is an N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: 30V (Drain-Source, VDSS).
- Current Capacity: 1A (Continuous Drain Current, ID).
- Low On-Resistance: 180mΩ (typical at VGS = 10V), minimizing power loss.
- Gate Threshold Voltage: 1–2.5V (VGS(th)), suitable for low-drive logic circuits.
- Package: SOT-23 (compact, surface-mount).
Applications:
- Power management in portable devices (e.g., smartphones, tablets).
- Load switching, DC-DC converters, and battery protection circuits.
Advantages:
- Low gate charge for fast switching.
- RoHS-compliant and lead-free.
Ideal for space-constrained designs requiring efficient power handling. For detailed specs, refer to the datasheet.
- Voltage Rating: 30V (Drain-Source, VDSS).
- Current Capacity: 1A (Continuous Drain Current, ID).
- Low On-Resistance: 180mΩ (typical at VGS = 10V), minimizing power loss.
- Gate Threshold Voltage: 1–2.5V (VGS(th)), suitable for low-drive logic circuits.
- Package: SOT-23 (compact, surface-mount).
Applications:
- Power management in portable devices (e.g., smartphones, tablets).
- Load switching, DC-DC converters, and battery protection circuits.
Advantages:
- Low gate charge for fast switching.
- RoHS-compliant and lead-free.
Ideal for space-constrained designs requiring efficient power handling. For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the MGSF1N03LT1G (N-channel MOSFET, 30V, 1A, SOT-23) include:
- SI2301DS-T1-GE3 (Vishay)
- DMN1019USN-7 (Diodes Inc.)
- BSS138 (NXP/Infineon) - lower current (0.2A) but similar voltage.
- 2N7002 (Fairchild/ON Semi) - widely available alternative.
Check datasheets for exact specs like RDS(on) and gate charge. For drop-in replacements, verify pin compatibility.
- SI2301DS-T1-GE3 (Vishay)
- DMN1019USN-7 (Diodes Inc.)
- BSS138 (NXP/Infineon) - lower current (0.2A) but similar voltage.
- 2N7002 (Fairchild/ON Semi) - widely available alternative.
Check datasheets for exact specs like RDS(on) and gate charge. For drop-in replacements, verify pin compatibility.
Pinout
The MGSF1N03LT1G is a N-channel MOSFET in a SOT-23 package with 3 pins (Gate, Drain, Source).
Key Functions:
- Gate (Pin 1): Controls the switching.
- Drain (Pin 2): Connects to the load (high-side).
- Source (Pin 3): Ground/reference terminal.
Specs:
- 30V Drain-Source Voltage (VDS)
- 1.5A Continuous Drain Current (ID)
- Low threshold voltage for logic-level control.
Commonly used in power switching, load control, and DC-DC converters.
Key Functions:
- Gate (Pin 1): Controls the switching.
- Drain (Pin 2): Connects to the load (high-side).
- Source (Pin 3): Ground/reference terminal.
Specs:
- 30V Drain-Source Voltage (VDS)
- 1.5A Continuous Drain Current (ID)
- Low threshold voltage for logic-level control.
Commonly used in power switching, load control, and DC-DC converters.
Manufacturer
The MGSF1N03LT1G is a N-channel MOSFET manufactured by ON Semiconductor (now part of onsemi).
ON Semiconductor (onsemi) is a global semiconductor company specializing in power management, analog, and sensor solutions for automotive, industrial, and consumer markets. Known for energy-efficient innovations, it provides components like MOSFETs, diodes, and ICs.
The MGSF1N03LT1G is a small-signal MOSFET designed for low-voltage, high-speed switching applications.
ON Semiconductor (onsemi) is a global semiconductor company specializing in power management, analog, and sensor solutions for automotive, industrial, and consumer markets. Known for energy-efficient innovations, it provides components like MOSFETs, diodes, and ICs.
The MGSF1N03LT1G is a small-signal MOSFET designed for low-voltage, high-speed switching applications.
Application
The MGSF1N03LT1G is a 30V N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Low-side/high-side switching in portable devices.
3. Battery Protection – Overcurrent/discharge prevention in battery packs.
4. Motor Control – Small motor drivers in consumer electronics.
5. LED Drivers – Efficient current control for LED lighting.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, low-power applications.
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Low-side/high-side switching in portable devices.
3. Battery Protection – Overcurrent/discharge prevention in battery packs.
4. Motor Control – Small motor drivers in consumer electronics.
5. LED Drivers – Efficient current control for LED lighting.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, low-power applications.
Package
The MGSF1N03LT1G is a N-channel MOSFET in a SOT-23 surface-mount package. It is compact, suitable for low-power applications, and features three pins (gate, drain, source). The SOT-23 package is widely used for its small size and ease of PCB integration.
