K4FBE3D4HM-TFCL

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K4FBE3D4HM-TFCL

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32Gbit 2.133GHz LPDDR4 SDRAM FBGA-200 Memory (ICs) RoHS

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規格

屬性 價值
Packaging FBGA-200
Clock Frequency 2.133GHz
Current - Supply 12mA
Memory Format LPDDR4 SDRAM
Memory Size 32Gbit
Operating temperature -40℃~+95℃
Refresh Current 2mA
Voltage - Supply 1.06V~1.17V;1.7V~1.95V

概述

Description

K4FBE3D4HM-TFCL appears to be a model number or part code, possibly related to a semiconductor component, electronic device, or specialized hardware. Such codes are typically used by manufacturers to identify specific products, configurations, or versions within broader product lines. The code could represent specifics like memory type, capacity, or other technical specifications related to performance and compatibility. Without additional context or industry-specific information, it's challenging to determine the exact nature and function of the item denoted by K4FBE3D4HM-TFCL. For precise details, consulting the manufacturer's documentation or product datasheet would be essential, as it would provide insights into the technical specifications, intended use cases, and any unique features of the product. Understanding the code fully often requires familiarity with the manufacturer's coding system or direct reference to industry databases or catalogs.

Equivalent

The K4FBE3D4HM-TFCL is a Samsung LPDDR4x DRAM chip. Equivalent products would be other LPDDR4x DRAM chips with similar specifications from manufacturers like Micron, SK Hynix, and Kingston. Specific model numbers can vary, so it’s important to compare based on key specifications such as capacity, speed, and voltage requirements to find the best match. Always consult the manufacturer's datasheets for precise compatibility.

Features

The K4FBE3D4HM-TFCL is a DRAM chip, likely a part of Samsung's memory solutions. It's characterized by the following features:
1. Type: It is a low-power DDR4 (LPDDR4) DRAM.
2. Capacity: The model number suggests it could be a 4GB or similar capacity chip.
3. Power Efficiency: Optimized for lower power consumption, making it suitable for mobile and portable devices.
4. Performance: Offers high data transfer rates suitable for applications requiring quick access to data, like smartphones and tablets.
5. Form Factor: Typically packaged in a compact form suitable for integration into small devices.
6. Reliability and Endurance: Designed for long-term reliability with robust error correction and endurance capabilities.
7. Compatibility: Compatible with a wide range of processors and platforms supporting LPDDR4 memory.
This chip is typically used in devices that require efficient memory with minimal power draw, ensuring optimal battery life and performance.

Pinout

The K4FBE3D4HM-TFCL is a mobile DRAM chip, specifically LPDDR3 by Samsung. It typically comes in a package with a pin count of 178. The primary function of this chip is to provide high-performance, low-power memory solutions, typically used in mobile devices such as smartphones and tablets. With LPDDR3 technology, it supports faster data rates and efficient power consumption compared to its predecessors, enhancing device performance and battery life.

Manufacturer

The K4FBE3D4HM-TFCL is a product manufactured by Samsung Electronics. Samsung is a South Korean multinational corporation and one of the world's largest producers of electronic devices. The company is renowned for its diverse range of products, including semiconductors, telecommunications equipment, home appliances, and consumer electronics like smartphones, tablets, and televisions. Samsung is a key player in the semiconductor industry, providing memory chips and other components to various technology manufacturers globally.

Application

The K4FBE3D4HM-TFCL is a Samsung LPDDR4X DRAM chip, and its application areas primarily include mobile devices such as smartphones and tablets, where power efficiency and high performance are crucial. It is also used in ultrabooks, wearables, and IoT devices to provide low-power, high-speed memory solutions. The chip is designed to support high-definition multimedia content and advanced multitasking capabilities, making it suitable for applications requiring rapid data processing and energy efficiency. Its compact size and performance characteristics make it ideal for modern consumer electronics demanding long battery life and enhanced user experiences.

Package

The package type of K4FBE3D4HM-TFCL is a Ball Grid Array (BGA). BGA is a type of surface-mount packaging used for integrated circuits. It is known for providing a higher density of connections compared to other packaging types due to its use of an array of solder balls on the underside of the package.

Frequently Asked Questions


Q: What is the memory density of the K4FBE3D4HM-TFCL?
A: This component features a 32Gbit LPDDR4 SDRAM density, suitable for high-capacity mobile and embedded applications.


Q: What clock frequency does this LPDDR4 support?
A: It supports a maximum clock frequency of 2.133 GHz, enabling high-speed data transfer for performance-critical designs.


Q: What is the operating temperature range?
A: The device operates reliably from -40°C to +95°C, making it suitable for industrial and automotive environments.


Q: What are the supply voltage requirements?
A: It requires a VDD of 1.06V~1.17V and a VDDQ of 1.7V~1.95V, typical for LPDDR4 memory.


Q: How much current does it draw during operation?
A: Typical supply current is 12mA, with a separate refresh current of 2mA, ensuring low power consumption.


Q: What package type does this part use?
A: It is housed in a 200-ball FBGA package, designed for space-efficient PCB mounting.


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