IXTU01N100D

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IXTU01N100D

+物料清單

MOSFET N-CH 1000V 400MA TO251

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90-日售後保障

正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Series Depletion
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 400mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 0V
Rds On(Max) @ Id Vgs 80Ohm @ 50mA, 0V
Vgs(th)(Max) @ Id 4.5V @ 25µA
Gate Charge(Qg)(Max) @ Vgs 5.8 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 100 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA

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