規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HiPerFET™, Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 26A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 460mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 6.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 225 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 16000 pF @ 25 V |
| Power Dissipation (Max) | 960W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) |
概述
Description
The IXFK26N120P is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for demanding switching applications. Key features include:
- Voltage Rating: 1200V
- Current Rating: 26A (continuous)
- Low Saturation Voltage (VCE(sat)): ~2.1V (typical)
- Fast Switching: Suitable for high-frequency inverters and motor drives
- Robust Construction: Isolated baseplate for thermal efficiency
Commonly used in industrial motor drives, UPS systems, and renewable energy converters, it offers a balance of efficiency and reliability. Its NPT (Non-Punch Through) technology ensures low conduction losses and high ruggedness.
For detailed specs, refer to the datasheet from Littelfuse (formerly IXYS).
- Voltage Rating: 1200V
- Current Rating: 26A (continuous)
- Low Saturation Voltage (VCE(sat)): ~2.1V (typical)
- Fast Switching: Suitable for high-frequency inverters and motor drives
- Robust Construction: Isolated baseplate for thermal efficiency
Commonly used in industrial motor drives, UPS systems, and renewable energy converters, it offers a balance of efficiency and reliability. Its NPT (Non-Punch Through) technology ensures low conduction losses and high ruggedness.
For detailed specs, refer to the datasheet from Littelfuse (formerly IXYS).
Equivalent
Equivalent products to the IXFK26N120P (1200V, 26A IGBT) include:
- IRG4PH50UD (Infineon)
- FGA25N120ANTD (Fairchild/ON Semi)
- HGTG20N120BND (Microsemi)
- STGW30N120KD (STMicroelectronics)
These are similar in voltage/current ratings and package (TO-247 typically). Verify datasheets for exact compatibility.
- IRG4PH50UD (Infineon)
- FGA25N120ANTD (Fairchild/ON Semi)
- HGTG20N120BND (Microsemi)
- STGW30N120KD (STMicroelectronics)
These are similar in voltage/current ratings and package (TO-247 typically). Verify datasheets for exact compatibility.
Features
The IXFK26N120P is a high-performance IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 1200V
- Current Rating: 26A (continuous)
- Low VCE(sat): 1.85V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: High short-circuit withstand capability (5µs)
- Temperature Range: Operates up to 150°C (Tj)
- Package: TO-247 (isolated baseplate for easy mounting)
- Applications: Suitable for inverters, motor drives, and power supplies
This IGBT balances efficiency and ruggedness, making it ideal for demanding power electronics.
- Voltage Rating: 1200V
- Current Rating: 26A (continuous)
- Low VCE(sat): 1.85V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: High short-circuit withstand capability (5µs)
- Temperature Range: Operates up to 150°C (Tj)
- Package: TO-247 (isolated baseplate for easy mounting)
- Applications: Suitable for inverters, motor drives, and power supplies
This IGBT balances efficiency and ruggedness, making it ideal for demanding power electronics.
Manufacturer
The IXFK26N120P is a high-power IGBT (Insulated Gate Bipolar Transistor) manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc.
IXYS was a semiconductor company specializing in high-performance power components, including IGBTs, MOSFETs, and thyristors, before being acquired by Littelfuse in 2017. Littelfuse is a global leader in circuit protection, power control, and sensing technologies.
The IXFK26N120P is designed for industrial, renewable energy, and high-voltage applications, reflecting IXYS's expertise in robust power electronics.
IXYS was a semiconductor company specializing in high-performance power components, including IGBTs, MOSFETs, and thyristors, before being acquired by Littelfuse in 2017. Littelfuse is a global leader in circuit protection, power control, and sensing technologies.
The IXFK26N120P is designed for industrial, renewable energy, and high-voltage applications, reflecting IXYS's expertise in robust power electronics.
Application
The IXFK26N120P is a high-power IGBT module primarily used in:
1. Industrial Motor Drives – For controlling AC motors in automation and machinery.
2. Power Supplies – In high-efficiency switched-mode power supplies (SMPS).
3. Renewable Energy Systems – Such as solar inverters and wind power converters.
4. Welding Equipment – For precise power control in arc and resistance welding.
5. Electric Vehicles (EVs) – In traction inverters and charging systems.
Its high voltage (1200V) and current (26A) ratings make it suitable for demanding power electronics applications.
1. Industrial Motor Drives – For controlling AC motors in automation and machinery.
2. Power Supplies – In high-efficiency switched-mode power supplies (SMPS).
3. Renewable Energy Systems – Such as solar inverters and wind power converters.
4. Welding Equipment – For precise power control in arc and resistance welding.
5. Electric Vehicles (EVs) – In traction inverters and charging systems.
Its high voltage (1200V) and current (26A) ratings make it suitable for demanding power electronics applications.
