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IXTQ60N20T
+物料清單MOSFET N-CH 200V 60A TO3P
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製造商Littelfuse公司
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製造商部分 #IXTQ60N20T
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有存貨5978
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規格
| 屬性 | 價值 |
| Series | Trench |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4530 pF @ 25 V |
| Power Dissipation (Max) | 500W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | IXTQ60 |
概述
Description
The IXTQ60N20T is packaged in a TO-247 format, allowing for efficient heat dissipation, which is crucial in high-power applications. It offers robust reliability and thermal performance, making it a popular choice among engineers for various industrial and consumer electronics applications. Understanding its specifications and characteristics is essential for proper integration into circuits to ensure optimal performance and longevity.
Equivalent
Features
- Voltage Rating: Up to 200V, making it suitable for high-voltage applications.
- Current Rating: 60A continuous drain current, ideal for power management and switching applications.
- RDS(on): Low on-resistance (typically around 0.060 ohms), which enhances efficiency by minimizing conduction losses.
- Gate Threshold Voltage (Vgs(th)): Typically ranges from 2V to 4V, allowing for easier drive from low-voltage control circuits.
- Thermal Performance: Good thermal stability, with a maximum junction temperature of 150°C, ensuring reliable operation in demanding conditions.
- Package: Offered in TO-220 or similar packages for easy mounting and heat dissipation.
These features make the IXTQ60N20T suitable for use in power supplies, motor control, and other high-efficiency applications. Always refer to the manufacturer's datasheet for detailed specifications and additional information.
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's operation (turns it on/off).
2. Drain (D) - The main current-carrying terminal; current flows out of this terminal when the MOSFET is on.
3. Source (S) - The terminal through which current enters the MOSFET when it is in the on state.
4. Tab/Heatsink - Often connected to the source for thermal management.
The IXTQ60N20T is designed for applications needing high efficiency and fast switching speeds, such as in power management and motor control circuits.
Manufacturer
Application
1. Power Supplies: Efficient switching in DC-DC converters and power management systems.
2. Motor Control: Used in electric motor drives for automotive and industrial applications.
3. Inverters: Employed in renewable energy systems, such as solar inverters and wind turbine controllers.
4. Lighting: Utilized in LED drivers and smart lighting solutions.
5. Telecommunications: High-efficiency switching in RF amplifiers and signal processing units.
Its high voltage and current handling capabilities make it suitable for demanding applications requiring reliability and efficiency.