IXFP34N65X2

圖片僅供參考

IXFP34N65X2

+物料清單

MOSFET N-CH 650V 34A TO220AB

  • 製造商IXYS公司

  • 製造商部分 #IXFP34N65X2

  • 有存貨6497

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Ultra X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 34A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 105mOhm @ 17A, 10V
Vgs(th)(Max) @ Id 5.5V @ 2.5mA
Gate Charge(Qg)(Max) @ Vgs 56 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 3330 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

概述

Description

IXFP34N65X2 is a high‑voltage N‑channel power MOSFET in the IXFP family, used for switching power electronics. The device is intended for 650‑V class applications (e.g., offline SMPS, PFC stages, motor drives, DC–DC converters). The “34” and “65” suggest roughly tens of amperes of current capability and about 650 V breakdown, with the “X2” suffix indicating a specific package variant. However, exact electricals (Vds max, Id, Rds(on), Vgs(th), gate charge) depend on the exact lot and package. To design safely, consult the latest datasheet from IXYS (or the distributor) for precise values, including: Vds, Id, Rds(on) at your gate drive, Qgs/Qgd, switching speeds, and thermal resistance (RθJA/RθJC). Also verify pinout and pad layout for the chosen package. In short: it’s a 650‑V N‑MOSFET for high‑power switching; verify the official datasheet for exact specs before use.

Features

IXFP34N65X2 is a high‑voltage N‑channel power MOSFET. Key features:
- Type: enhancement‑mode N‑channel MOSFET
- Vds: ~650 V
- Id: ~34 A continuous current
- Rds(on): specified in the datasheet (low enough for efficient switching; exact value varies by temp/gate drive)
- Gate drive: typically 10 V recommended
- Switching: fast with low gate charge
- Protection: avalanche ruggedness for inductive switching
- Temp range: wide operating temperature (TJ up to ~150°C)
- Packaging: available in standard surface‑mount and through‑hole packages
- Applications: switch-mode power supplies, PFC, motor drives, inverters
Note: consult the latest datasheet for exact Rds(on), Vgs(th), package options, and thermal limits for your application.

Pinout

Pin count: 6 leads.
Function: Dual N-channel enhancement-mode high-voltage MOSFET pair (650 V, ~34 A per device) in a single package (X2). Each MOSFET has its own gate and source; the two drains are typically tied to the package tab/exposed pad (common drain).

Manufacturer

- Manufacturer: IXYS Corporation (now part of Littelfuse).
- What kind of company: A semiconductor company specializing in power electronics, designing and manufacturing power MOSFETs, IGBTs, diodes, and other high-voltage devices.

Application

IXFP34N65X2 is a high‑voltage N‑channel MOSFET (about 650 V, ~34 A). Typical applications include:
- Switch‑mode power supplies (SMPS) and PFC stages
- DC‑DC converters
- Solar/PV inverters and renewable‑energy systems
- Motor drives and servo drives
- Uninterruptible power supplies (UPS) and telecom/industrial power supplies
- AC‑DC front ends and high‑voltage switching in power electronics

Package

TO-220AB (through-hole) package.

與IXFP34N65X2相關的產品