IXFN82N60Q3

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IXFN82N60Q3

+物料清單

MOSFET N-CH 600V 66A SOT227B

  • 製造商IXYS公司

  • 製造商部分 #IXFN82N60Q3

  • 有存貨6207

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正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Q3 Class
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 66A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 75mOhm @ 41A, 10V
Vgs(th)(Max) @ Id 6.5V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 275 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 13500 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B

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