IXFN120N65X2

圖片僅供參考

IXFN120N65X2

+物料清單

MOSFET N-CH 650V 108A SOT227B

  • 製造商IXYS公司

  • 製造商部分 #IXFN120N65X2

  • 有存貨7091

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Ultra X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 108A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 24mOhm @ 54A, 10V
Vgs(th)(Max) @ Id 5.5V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 225 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 15500 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B

與IXFN120N65X2相關的產品