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IXFB44N100P
+物料清單MOSFET N-CH 1000V 44A PLUS264
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製造商IXYS公司
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製造商部分 #IXFB44N100P
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有存貨5921
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規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | HiPerFET™, Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 44A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 220mOhm @ 22A, 10V |
| Vgs(th)(Max) @ Id | 6.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 305 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 19000 pF @ 25 V |
| Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS264™ |
概述
Description
Key features of the IXFB44N100P include a high voltage rating, with a drain-source voltage (V_ds) of 1000V, and a continuous drain current (I_d) capability of 44A. The device is engineered to handle substantial power levels while maintaining low on-state resistance, which minimizes energy losses during operation. Its robust construction allows for high-speed switching, contributing to enhanced efficiency in various electronic systems.
The IXFB44N100P is housed in a TO-247 package, which provides effective heat dissipation and ensures reliable thermal performance. Overall, this MOSFET is suitable for demanding applications where high efficiency and durability are critical.
Equivalent
1. STMicroelectronics - STP44NF10
2. ON Semiconductor - FDPF33N25
3. Infineon - IPP44N10S3L-03
Ensure to verify the specifications like RDS(on), Vds, Id, and package type to confirm compatibility. Always consult the datasheets for detailed comparisons.
Features
1. Voltage and Current Ratings: It has a drain-source breakdown voltage (V_ds) of 1000V and a continuous drain current (I_d) rating of 44A, making it suitable for high-power applications.
2. R_ds(on) Value: It offers a low on-resistance, which helps in minimizing power losses and enhancing efficiency, particularly in switching applications.
3. Fast Switching: The MOSFET is designed for fast switching speeds, contributing to improved performance in high-frequency applications.
4. Thermal Performance: It provides efficient thermal management, often featuring a metal oxide semiconductor construction that aids in heat dissipation.
5. Applications: Typical uses include power supplies, motor drives, inverters, and other industrial applications requiring high reliability and efficiency.
6. Package Type: It is commonly available in a TO-247 package, providing mechanical stability and ease of mounting.
These features make the IXFB44N100P a preferred choice for engineers dealing with high-voltage and high-current requirements.
Pinout
In terms of pin count and function:
1. Pin 1 (Gate - G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
2. Pin 2 (Drain - D): This pin is connected to the load. It is the terminal through which the main current flows when the MOSFET is in the on state.
3. Pin 3 (Source - S): Typically connected to ground or the negative side of the power supply, this terminal is the return path for the current flowing through the drain.
The TO-264 package is designed for high power applications, providing efficient thermal management and allowing the MOSFET to handle significant power levels.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used in converters and inverters for efficient power conversion.
2. Motor Drives: Suitable for controlling and driving motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Ensures efficient power management and delivery.
4. Power Factor Correction (PFC) Circuits: Enhances power efficiency in electronic devices.
5. Renewable Energy Systems: Used in solar inverters and wind energy converters for efficient energy management.
6. Automotive Applications: Supports various functions in electric and hybrid vehicles.
Its high voltage and current ratings make it ideal for demanding power applications.