規格
| 屬性 | 價值 |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 65mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1200 pF @ 25 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
概述
Description
The IRFU5305PBF is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It's designed to handle high power levels and is commonly used in various electronic applications requiring efficient power management, such as power supplies, motor drives, and other high-current circuits.
Key features include:
1. Voltage and Current Ratings: The IRFU5305PBF typically supports a maximum drain-source voltage (V_DS) of around -55V and a continuous drain current (I_D) of about -31A.
2. Package Type: It is usually available in a TO-220 package, which facilitates efficient heat dissipation.
3. Low On-Resistance: This MOSFET is designed to offer low on-resistance (R_DS(on)), improving efficiency and reducing power loss during operation.
4. Applications: Suitable for applications like DC/DC converters, battery management systems, and general power switching.
Its robust design and efficient parameters make it a reliable choice for engineers dealing with high-power designs. Always refer to the datasheet for specific technical details and application guidance.
Key features include:
1. Voltage and Current Ratings: The IRFU5305PBF typically supports a maximum drain-source voltage (V_DS) of around -55V and a continuous drain current (I_D) of about -31A.
2. Package Type: It is usually available in a TO-220 package, which facilitates efficient heat dissipation.
3. Low On-Resistance: This MOSFET is designed to offer low on-resistance (R_DS(on)), improving efficiency and reducing power loss during operation.
4. Applications: Suitable for applications like DC/DC converters, battery management systems, and general power switching.
Its robust design and efficient parameters make it a reliable choice for engineers dealing with high-power designs. Always refer to the datasheet for specific technical details and application guidance.
Equivalent
The IRFU5305PBF is a P-channel MOSFET. Equivalent products include:
1. FQP27P06 from ON Semiconductor
2. STP80PF55 from STMicroelectronics
3. IPP60P03P4L-04 from Infineon Technologies
It's important to verify electrical specifications and package compatibility when selecting equivalents.
1. FQP27P06 from ON Semiconductor
2. STP80PF55 from STMicroelectronics
3. IPP60P03P4L-04 from Infineon Technologies
It's important to verify electrical specifications and package compatibility when selecting equivalents.
Features
The IRFU5305PBF is a P-channel MOSFET designed for various electronic and industrial applications. Key features include:
1. Vds Rating: It has a drain-to-source voltage rating of -55V, making it suitable for medium-voltage applications.
2. Current Capacity: It supports a continuous drain current of up to -31A, allowing for substantial current flow in circuits.
3. Rds(on): The on-state resistance is relatively low, typically around 0.08 ohms, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from -2V to -4V, ensuring the MOSFET is easily driven by standard logic levels.
5. Package Type: Available in a TO-251 (IPAK) package, which is suitable for through-hole mounting and offers good thermal performance.
6. Temperature Range: It operates within a wide temperature range, making it versatile for different environments.
7. Applications: Commonly used in power management, load switching, and DC-DC converters.
These features make the IRFU5305PBF a reliable choice for engineers seeking a robust P-channel MOSFET for their projects.
1. Vds Rating: It has a drain-to-source voltage rating of -55V, making it suitable for medium-voltage applications.
2. Current Capacity: It supports a continuous drain current of up to -31A, allowing for substantial current flow in circuits.
3. Rds(on): The on-state resistance is relatively low, typically around 0.08 ohms, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from -2V to -4V, ensuring the MOSFET is easily driven by standard logic levels.
5. Package Type: Available in a TO-251 (IPAK) package, which is suitable for through-hole mounting and offers good thermal performance.
6. Temperature Range: It operates within a wide temperature range, making it versatile for different environments.
7. Applications: Commonly used in power management, load switching, and DC-DC converters.
These features make the IRFU5305PBF a reliable choice for engineers seeking a robust P-channel MOSFET for their projects.
Pinout
The IRFU5305PBF is a P-channel MOSFET. It comes in a standard TO-251 (IPAK) package and typically features three pins. Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate allows current to flow between the drain and source.
2. Drain (D): Current enters the MOSFET through the drain when it is in the "on" state.
3. Source (S): Current exits the MOSFET through the source. For a P-channel MOSFET, the current flows from source to drain.
The IRFU5305PBF is commonly used for switching applications and power management due to its ability to handle high current and voltage levels.
1. Gate (G): This pin is used to control the MOSFET. Applying the appropriate voltage to the gate allows current to flow between the drain and source.
2. Drain (D): Current enters the MOSFET through the drain when it is in the "on" state.
3. Source (S): Current exits the MOSFET through the source. For a P-channel MOSFET, the current flows from source to drain.
The IRFU5305PBF is commonly used for switching applications and power management due to its ability to handle high current and voltage levels.
Manufacturer
The IRFU5305PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs and produces a wide range of electronic components and systems. The company was originally a part of Siemens AG, later becoming an independent entity. Infineon’s product portfolio includes power semiconductors, microcontrollers, sensors, and security solutions, serving various industries such as automotive, industrial, and consumer electronics. The IRFU5305PBF itself is a P-channel MOSFET, commonly used in power management and switching applications. Infineon is recognized for its focus on innovation and efficiency, emphasizing energy-saving technologies and solutions in its product development.
Application
The IRFU5305PBF is a P-channel MOSFET primarily used in applications requiring efficient power management and switching. It is commonly utilized in:
1. Load Switching: Controls power delivery to various components in electronic devices.
2. DC-DC Converters: Facilitates voltage regulation in power supply circuits.
3. Battery Management: Helps in charging and discharging control within battery-operated devices.
4. Motor Control: Manages motor operation in automotive and industrial applications.
5. Inverters: Used in solar inverters and UPS systems for efficient energy conversion.
Its low on-resistance and high current capacity make it suitable for high-efficiency and compact power designs.
1. Load Switching: Controls power delivery to various components in electronic devices.
2. DC-DC Converters: Facilitates voltage regulation in power supply circuits.
3. Battery Management: Helps in charging and discharging control within battery-operated devices.
4. Motor Control: Manages motor operation in automotive and industrial applications.
5. Inverters: Used in solar inverters and UPS systems for efficient energy conversion.
Its low on-resistance and high current capacity make it suitable for high-efficiency and compact power designs.
Package
The IRFU5305PBF is a P-channel MOSFET housed in a TO-251 (IPAK) package.
