規格
| 屬性 | 價值 |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 110A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 8mOhm @ 62A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 146 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3247 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
概述
Description
The IRF3205PBF is an N-channel power MOSFET from Infineon, designed for high-current, high-efficiency switching applications. Key features include:
- Voltage Rating: 55V
- Current Handling: 110A (continuous), 390A (pulsed)
- Low On-Resistance (RDS(on)): 8.0mΩ (max at 10V VGS)
- Fast Switching: Suitable for DC-DC converters, motor drives, and power management.
- Package: TO-220AB (through-hole), facilitating heat dissipation.
It operates with a gate threshold voltage (VGS(th)) of 2–4V, making it compatible with 5V/12V logic. The PBF suffix indicates lead-free (RoHS-compliant) construction.
Common uses include:
- High-power inverters
- Battery protection circuits
- Automotive applications
Ensure proper heat sinking and gate drive (≥4.5V) for optimal performance.
- Voltage Rating: 55V
- Current Handling: 110A (continuous), 390A (pulsed)
- Low On-Resistance (RDS(on)): 8.0mΩ (max at 10V VGS)
- Fast Switching: Suitable for DC-DC converters, motor drives, and power management.
- Package: TO-220AB (through-hole), facilitating heat dissipation.
It operates with a gate threshold voltage (VGS(th)) of 2–4V, making it compatible with 5V/12V logic. The PBF suffix indicates lead-free (RoHS-compliant) construction.
Common uses include:
- High-power inverters
- Battery protection circuits
- Automotive applications
Ensure proper heat sinking and gate drive (≥4.5V) for optimal performance.
Equivalent
Equivalent products to the IRF3205PBF (55V, 110A, 8mΩ MOSFET) include:
- IRL40B209 (40V, 180A, 4.5mΩ)
- IRLB4132PBF (40V, 156A, 4.2mΩ)
- STP80NF55-06 (55V, 80A, 6mΩ)
- FDP8878 (30V, 118A, 3.3mΩ)
- AUIRF3205Z (55V, 110A, 8mΩ, improved thermal performance)
Check datasheets for exact compatibility in your application.
- IRL40B209 (40V, 180A, 4.5mΩ)
- IRLB4132PBF (40V, 156A, 4.2mΩ)
- STP80NF55-06 (55V, 80A, 6mΩ)
- FDP8878 (30V, 118A, 3.3mΩ)
- AUIRF3205Z (55V, 110A, 8mΩ, improved thermal performance)
Check datasheets for exact compatibility in your application.
Features
The IRF3205PBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 55V
- Current Rating: 110A (continuous) @ 25°C
- Low On-Resistance (RDS(on)): 8.0 mΩ max @ VGS = 10V
- Fast Switching: Suitable for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive spikes
- Logic-Level Gate Drive: Compatible with 5V drive (but performs best at 10V)
- TO-220AB Package: Easy to mount with good thermal performance
Ideal for power switching, motor control, and DC-DC converters.
- Voltage Rating: 55V
- Current Rating: 110A (continuous) @ 25°C
- Low On-Resistance (RDS(on)): 8.0 mΩ max @ VGS = 10V
- Fast Switching: Suitable for high-efficiency applications
- Avalanche Energy Rated: Robust against inductive spikes
- Logic-Level Gate Drive: Compatible with 5V drive (but performs best at 10V)
- TO-220AB Package: Easy to mount with good thermal performance
Ideal for power switching, motor control, and DC-DC converters.
Pinout
The IRF3205PBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (typically driven by 4V–10V).
2. Drain (D) – Connects to the load (handles up to 55V and 110A).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)): 8.0 mΩ max at VGS = 10V.
- High current handling: 110A continuous.
- Fast switching: Suitable for power applications like motor drives and DC-DC converters.
Concise and functional summary.
1. Gate (G) – Controls the switching operation (typically driven by 4V–10V).
2. Drain (D) – Connects to the load (handles up to 55V and 110A).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)): 8.0 mΩ max at VGS = 10V.
- High current handling: 110A continuous.
- Fast switching: Suitable for power applications like motor drives and DC-DC converters.
Concise and functional summary.
Application
The IRF3205PBF, a power MOSFET, is widely used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, PWM controllers.
3. Automotive Systems – Electronic ignition, LED drivers.
4. Solar Inverters – Efficient power conversion.
5. Battery Management – Charge/discharge control.
6. Audio Amplifiers – High-power output stages.
Its low on-resistance (1.7mΩ) and high current rating (110A) make it ideal for high-efficiency, high-power applications.
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, PWM controllers.
3. Automotive Systems – Electronic ignition, LED drivers.
4. Solar Inverters – Efficient power conversion.
5. Battery Management – Charge/discharge control.
6. Audio Amplifiers – High-power output stages.
Its low on-resistance (1.7mΩ) and high current rating (110A) make it ideal for high-efficiency, high-power applications.
Package
The IRF3205PBF is packaged in a TO-220AB through-hole package. This package type is widely used for power MOSFETs, offering good thermal performance and ease of mounting on heat sinks. It has three leads (gate, drain, source) and is suitable for high-current applications. The "PBF" suffix indicates it is lead-free and RoHS compliant.
