規格
| 屬性 | 價值 |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1690 pF @ 25 V |
| Power Dissipation (Max) | 3W (Ta), 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
概述
Description
The IRFU3410PBF is a N-channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications.
### Key Features:
- Voltage Rating: 100V
- Current Rating: 58A (continuous)
- Low On-Resistance (RDS(on)): 10.5mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed performance
- Package: TO-220 (through-hole, easy mounting)
- Avalanche Energy Rated: Enhances ruggedness
### Applications:
- DC-DC converters
- Motor control
- Power supplies
- Automotive systems
### Advantages:
- High current handling
- Low conduction losses
- Robust thermal performance
This MOSFET is ideal for high-power, high-frequency switching where efficiency and reliability are critical.
### Key Features:
- Voltage Rating: 100V
- Current Rating: 58A (continuous)
- Low On-Resistance (RDS(on)): 10.5mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed performance
- Package: TO-220 (through-hole, easy mounting)
- Avalanche Energy Rated: Enhances ruggedness
### Applications:
- DC-DC converters
- Motor control
- Power supplies
- Automotive systems
### Advantages:
- High current handling
- Low conduction losses
- Robust thermal performance
This MOSFET is ideal for high-power, high-frequency switching where efficiency and reliability are critical.
Equivalent
Equivalent products to the IRFU3410PBF (N-channel MOSFET, 55V, 62A) include:
- IRL3410PBF (similar specs, logic-level gate)
- IRF3410PBF (same specs, different package)
- IRF3205PBF (55V, 110A, higher current)
- STP55NF06L (60V, 55A, comparable)
- FQP55N06L (60V, 55A, logic-level)
Check datasheets for exact compatibility in your application.
- IRL3410PBF (similar specs, logic-level gate)
- IRF3410PBF (same specs, different package)
- IRF3205PBF (55V, 110A, higher current)
- STP55NF06L (60V, 55A, comparable)
- FQP55N06L (60V, 55A, logic-level)
Check datasheets for exact compatibility in your application.
Features
The IRFU3410PBF is a HEXFET Power MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 21A (continuous)
- Low On-Resistance (RDS(on)): 44mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Avalanche Energy Rated: Improved ruggedness
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- TO-220AB Package: Easy mounting and heat dissipation
- Applications: Power supplies, motor control, DC-DC converters
Designed for high efficiency and reliability in power electronics.
- Voltage Rating: 100V
- Current Rating: 21A (continuous)
- Low On-Resistance (RDS(on)): 44mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Avalanche Energy Rated: Improved ruggedness
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- TO-220AB Package: Easy mounting and heat dissipation
- Applications: Power supplies, motor control, DC-DC converters
Designed for high efficiency and reliability in power electronics.
Pinout
The IRFU3410PBF is a HEXFET power MOSFET in a TO-220AB package with 3 pins:
1. Gate (G): Controls the switching operation (input signal).
2. Drain (D): Connects to the load (output).
3. Source (S): Ground reference.
Key Features:
- Voltage Rating: 100V
- Current Rating: 75A (continuous)
- Low On-Resistance (RDS(on)): 9.3mΩ (max at 10V VGS)
- Fast Switching: Suitable for power applications like motor drives, DC-DC converters, and inverters.
Note: Requires proper heat sinking due to TO-220 package limitations.
1. Gate (G): Controls the switching operation (input signal).
2. Drain (D): Connects to the load (output).
3. Source (S): Ground reference.
Key Features:
- Voltage Rating: 100V
- Current Rating: 75A (continuous)
- Low On-Resistance (RDS(on)): 9.3mΩ (max at 10V VGS)
- Fast Switching: Suitable for power applications like motor drives, DC-DC converters, and inverters.
Note: Requires proper heat sinking due to TO-220 package limitations.
Manufacturer
The IRFU3410PBF is manufactured by Infineon Technologies, a German semiconductor company. Infineon specializes in power management, automotive electronics, and industrial applications. Known for high-quality MOSFETs and other power components, Infineon serves industries like automotive, renewable energy, and consumer electronics. The company is a leader in semiconductor innovation and efficiency.
Application
The IRFU3410PBF, a HEXFET Power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC applications.
2. Motor Control – Drives and controls motors in industrial and automotive systems.
3. Solar Inverters – Converts DC to AC in renewable energy systems.
4. Battery Management – Protects and regulates power in battery-operated devices.
5. LED Lighting – Enhances efficiency in LED drivers.
Its low on-resistance and high current handling make it ideal for high-efficiency power switching.
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC applications.
2. Motor Control – Drives and controls motors in industrial and automotive systems.
3. Solar Inverters – Converts DC to AC in renewable energy systems.
4. Battery Management – Protects and regulates power in battery-operated devices.
5. LED Lighting – Enhances efficiency in LED drivers.
Its low on-resistance and high current handling make it ideal for high-efficiency power switching.
Package
The IRFU3410PBF is a HEXFET Power MOSFET from Infineon, available in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal and electrical performance. The TO-220AB features a tab for heatsink mounting, making it suitable for high-power dissipation. It has three leads: gate, drain, and source.
