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IRFR024TRPBF
+物料清單MOSFET N-CH 60V 14A DPAK
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製造商矽尼克斯
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製造商部分 #IRFR024TRPBF
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規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 14A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 8.4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 640 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
概述
Description
Key features of the IRFR024TRPBF include a low on-resistance, which allows it to handle significant current with minimal power loss, making it ideal for power management in electronic circuits. It typically finds use in various applications such as DC-DC converters, motor drives, and power management systems in automotive and industrial contexts. The part is also RoHS-compliant, indicating it is manufactured with minimal hazardous substances.
The package type often used for this MOSFET is TO-252, which supports efficient heat dissipation and compact mounting on circuit boards. Its reliability and performance make it a suitable choice for engineers looking to optimize power efficiency in their designs.
Equivalent
1. IRFR024N
2. IRFR024Z
3. FQP30N06L
4. STP55NF06
5. NTE2395
These alternatives have similar characteristics, such as voltage and current ratings, making them suitable replacements in various applications. Always verify specifications to ensure compatibility with your specific requirements.
Features
1. Drain-Source Voltage (Vds): The MOSFET can handle up to 55V, making it suitable for a variety of medium voltage applications.
2. Continuous Drain Current (Id): It supports a continuous current of up to 17A, ensuring it can handle significant loads.
3. Rds(on): The device exhibits a low on-resistance of approximately 0.05 ohms, which contributes to reduced power loss and improved efficiency.
4. Package: It is available in a TO-252 (DPAK) surface-mount package, which offers a compact and efficient design for PCB layout.
5. Temperature Range: It operates effectively within a wide temperature range, supporting reliability in various environmental conditions.
6. Applications: Commonly used in power management, DC-DC converters, and motor control due to its efficient performance in high-speed switching applications.
These features make the IRFR024TRPBF a versatile component suitable for various electronic applications requiring efficient power management.
Pinout
1. Pin 1 (Gate): This pin controls the MOSFET's switching operation. When voltage is applied to the gate, it allows current to flow between the drain and source.
2. Pin 2 (Drain): The drain is the terminal through which the current flows into the MOSFET. It is typically connected to the load in a circuit.
3. Pin 3 (Source): The source is the terminal through which the current exits the MOSFET. It is generally connected to ground or the negative side of the power supply in a circuit.
Additionally, the tab on the DPAK package, which is internally connected to the drain, helps in heat dissipation and can also be used for electrical connections in power applications.
Overall, the IRFR024TRPBF is used in applications requiring efficient switching and handling of high currents and voltages, such as power supplies, motor controllers, and other high-power circuits.
Manufacturer
Application
1. Switching Power Supplies: Used in DC-DC converters and AC-DC power supplies for efficient energy conversion.
2. Motor Control: Ideal for driving motors in industrial, automotive, and consumer electronics.
3. Load Switches: Utilized in power distribution and circuit protection systems.
4. Inverters: Applied in inverters for solar panels and uninterruptible power supplies (UPS).
5. LED Drivers: Used in LED lighting systems for controlling brightness and power efficiency.
These applications benefit from the MOSFET's low on-resistance, high-speed switching, and robust thermal performance.