規格
| 屬性 | 價值 |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 95A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 5.3mOhm @ 95A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5600 pF @ 25 V |
| Power Dissipation (Max) | 310W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
概述
Description
The IRFP1405PBF is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 55V
- Current Handling: 169A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 3.6 mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed performance
- Package: TO-247AC (through-hole)
Ideal for power supplies, motor control, and DC-DC converters, it offers robust performance with low conduction losses. The PBF suffix indicates lead-free compliance. Always refer to the datasheet for thermal and gate-drive requirements.
- Voltage Rating: 55V
- Current Handling: 169A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 3.6 mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed performance
- Package: TO-247AC (through-hole)
Ideal for power supplies, motor control, and DC-DC converters, it offers robust performance with low conduction losses. The PBF suffix indicates lead-free compliance. Always refer to the datasheet for thermal and gate-drive requirements.
Equivalent
Equivalent products to the IRFP1405PBF (55V, 169A, N-Channel MOSFET) include:
- IRFP1407PBF (75V, 130A)
- IRFP150PBF (100V, 42A)
- IRFP260NPBF (200V, 50A)
- IRFP4468PBF (100V, 195A)
- STP160N55F6 (55V, 160A, STMicroelectronics)
- IXFH170N55T (55V, 170A, IXYS)
Check voltage/current ratings and package compatibility before substitution.
- IRFP1407PBF (75V, 130A)
- IRFP150PBF (100V, 42A)
- IRFP260NPBF (200V, 50A)
- IRFP4468PBF (100V, 195A)
- STP160N55F6 (55V, 160A, STMicroelectronics)
- IXFH170N55T (55V, 170A, IXYS)
Check voltage/current ratings and package compatibility before substitution.
Pinout
The IRFP1405PBF is a Power MOSFET with 3 pins (TO-220AB package).
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-Channel MOSFET
- VDS: 55V
- ID: 169A (pulsed) / 118A (continuous)
- RDS(on): 4.0mΩ (max @ 10V VGS)
Commonly used in high-current switching applications like motor drives and power supplies.
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-Channel MOSFET
- VDS: 55V
- ID: 169A (pulsed) / 118A (continuous)
- RDS(on): 4.0mΩ (max @ 10V VGS)
Commonly used in high-current switching applications like motor drives and power supplies.
Application
The IRFP1405PBF, a power MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors.
3. Inverters – Solar inverters, UPS systems.
4. Automotive – Electric vehicle power systems.
5. Industrial Equipment – High-current switching applications.
Its low on-resistance (RDS(on)) and high current handling (169A) make it ideal for high-efficiency, high-power circuits.
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors.
3. Inverters – Solar inverters, UPS systems.
4. Automotive – Electric vehicle power systems.
5. Industrial Equipment – High-current switching applications.
Its low on-resistance (RDS(on)) and high current handling (169A) make it ideal for high-efficiency, high-power circuits.
Package
The IRFP1405PBF is packaged in a TO-247AC (also known as TO-247-3) through-hole package. This package is robust, suitable for high-power applications, and features three leads for easy mounting. It provides efficient thermal dissipation due to its design, making it ideal for power MOSFET applications.
