規格
| 屬性 | 價值 |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4520 pF @ 50 V |
| PowerDissipation(Max) | 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRFB3306PBF is a N-channel MOSFET from Infineon, designed for high-power applications. Key features include:
- Voltage Rating: 60V
- Current Rating: 195A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at 10V VGS)
- Fast Switching: Suitable for high-efficiency power conversion
- Package: TO-220AB (through-hole)
Common applications include motor drives, DC-DC converters, and power supplies, where low conduction losses and high current handling are critical. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.
- Voltage Rating: 60V
- Current Rating: 195A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at 10V VGS)
- Fast Switching: Suitable for high-efficiency power conversion
- Package: TO-220AB (through-hole)
Common applications include motor drives, DC-DC converters, and power supplies, where low conduction losses and high current handling are critical. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the IRFB3306PBF (N-channel MOSFET, 60V, 120A, 3.3mΩ) include:
- IRFB3307PBF (similar specs, slightly higher Rds(on))
- IRFB4310PBF (higher voltage, 100V)
- AUIRFB3306 (same specs, automotive-grade)
- STP160N6F7 (STMicroelectronics alternative)
- IPP060N06N (Infineon alternative)
Check datasheets for exact compatibility in your application.
- IRFB3307PBF (similar specs, slightly higher Rds(on))
- IRFB4310PBF (higher voltage, 100V)
- AUIRFB3306 (same specs, automotive-grade)
- STP160N6F7 (STMicroelectronics alternative)
- IPP060N06N (Infineon alternative)
Check datasheets for exact compatibility in your application.
Features
The IRFB3306PBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 195A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10V
- Fast Switching: Low gate charge (Qgs = 60nC, Qgd = 110nC)
- High Power Handling: Suitable for high-current applications
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole)
- Applications: Motor drives, power supplies, inverters, and DC-DC converters
Designed for efficiency in high-power switching, it offers low conduction losses and fast switching performance.
- Voltage Rating: 60V
- Current Rating: 195A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10V
- Fast Switching: Low gate charge (Qgs = 60nC, Qgd = 110nC)
- High Power Handling: Suitable for high-current applications
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole)
- Applications: Motor drives, power supplies, inverters, and DC-DC converters
Designed for efficiency in high-power switching, it offers low conduction losses and fast switching performance.
Pinout
The IRFB3306PBF is a Power MOSFET in a TO-220AB package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- 60V drain-source voltage (VDS)
- 120A continuous drain current (ID)
- Low on-resistance (RDS(on) = 1.8mΩ max at 10V VGS)
- Used in high-power switching (motor drives, power supplies, inverters).
*Package:* TO-220AB (through-hole, tab is electrically connected to the drain).
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- 60V drain-source voltage (VDS)
- 120A continuous drain current (ID)
- Low on-resistance (RDS(on) = 1.8mΩ max at 10V VGS)
- Used in high-power switching (motor drives, power supplies, inverters).
*Package:* TO-220AB (through-hole, tab is electrically connected to the drain).
Application
The IRFB3306PBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient power conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives motors in industrial, automotive, and robotics systems.
3. Solar Inverters – Converts DC from solar panels to AC with minimal losses.
4. Battery Management – Used in charging/discharging circuits for energy storage.
5. LED Lighting – Enables high-efficiency LED drivers.
Its low on-resistance and high current handling make it ideal for high-power, high-frequency switching applications.
1. Switching Power Supplies – Efficient power conversion in AC/DC and DC/DC applications.
2. Motor Control – Drives motors in industrial, automotive, and robotics systems.
3. Solar Inverters – Converts DC from solar panels to AC with minimal losses.
4. Battery Management – Used in charging/discharging circuits for energy storage.
5. LED Lighting – Enables high-efficiency LED drivers.
Its low on-resistance and high current handling make it ideal for high-power, high-frequency switching applications.
Package
The IRFB3306PBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal performance and ease of mounting on heat sinks. It features three leads (gate, drain, source) and is suitable for high-current, high-voltage switching. The TO-220AB package ensures efficient heat dissipation, making it ideal for power management circuits.
