IRF7759L2TRPBF

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IRF7759L2TRPBF

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IRF7759 - 12V-300V N-CHANNEL POW

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規格

屬性 價值
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain(Id) @ 25°C 26A (Ta), 375A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2.3mOhm @ 96A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 300 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 12222 pF @ 25 V
Power Dissipation (Max) 3.3W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DirectFET™ Isometric L8

概述

Description

The IRF7759L2TRPBF is a power MOSFET transistor designed for high-efficiency power conversion applications. It is part of the HEXFET line from Infineon Technologies, known for its robust performance and reliability in demanding electronic applications. This particular MOSFET is designed to handle high current loads and operates at low voltages, which makes it suitable for use in various power management circuits, including DC-DC converters, motor drives, and switch-mode power supplies.
Key features of the IRF7759L2TRPBF include low on-resistance (R_DS(on)), which minimizes power losses and improves overall efficiency, and its ability to handle significant current and thermal loads due to its robust construction. It comes in a surface-mount package, which allows for compact and efficient circuit board designs suitable for space-constrained applications.
Overall, the IRF7759L2TRPBF is a versatile and efficient component for engineers looking to design high-performance power management solutions.

Equivalent

The IRF7759L2TRPBF is a power MOSFET produced by Infineon Technologies. Equivalent products may include similar power MOSFETs from other manufacturers with comparable voltage, current ratings, and package type. Such alternatives include the STMicroelectronics STP75NF75, ON Semiconductor FDP047N10, and Vishay Siliconix SIHP054N10. Always verify the electrical characteristics and package compatibility with your specific application before substituting.

Features

The IRF7759L2TRPBF is a HEXFET power MOSFET designed by Infineon Technologies. Key features include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of around 160A.
2. Low Rds(on): The device offers low on-state resistance, which enhances efficiency by reducing power losses during operation.
3. Package Type: It is commonly available in a D2PAK package, which provides enhanced thermal performance and ease of mounting on PCBs.
4. Fast Switching: The MOSFET is designed for high-speed switching applications, which is crucial for efficiency in power conversion systems.
5. Applications: Suitable for automotive applications, DC-DC converters, and other high-performance applications requiring efficient load switching.
6. Ruggedness: It features robust construction to handle power surges and withstand harsh operating environments.
These features make the IRF7759L2TRPBF a suitable choice for high-current applications, particularly in automotive and industrial sectors. Always refer to the datasheet for detailed specifications and application guidelines.

Pinout

The IRF7759L2TRPBF is a power MOSFET. It typically comes in a DirectFET package, which is known for its low package inductance and high efficiency in switching applications. This MOSFET is designed for use in high-frequency applications like DC-DC converters and synchronous rectification in power supplies.
Regarding pin count, the DirectFET package generally does not have traditional pins like other semiconductor packages; instead, it has solderable bumps or lands for surface mounting. However, it effectively connects using these contact points.
Functionally, the IRF7759L2TRPBF serves as a switch in electronic circuits, allowing for high efficiency and fast switching speeds due to its low on-resistance and high current-carrying capability. It is often used in applications requiring efficient power management and control.
For exact specifications and layout details, it is advisable to consult the datasheet provided by the manufacturer, Vishay Siliconix, for precise pin configuration and electrical characteristics.

Manufacturer

The IRF7759L2TRPBF is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon is known for producing a wide range of semiconductor solutions, including microcontrollers, power semiconductors, and integrated circuits for various industries. The company focuses on areas such as automotive electronics, industrial power control, power management, and digital security solutions. Infineon’s products are used in diverse applications, including consumer electronics, energy management, automotive safety systems, and IoT (Internet of Things) devices.

Application

The IRF7759L2TRPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various power management applications. Its primary application areas include:
1. Power Supply Units (PSUs): Used for efficient power conversion and regulation.
2. Motor Drives: Suitable for controlling DC motors and actuators in industrial and automotive applications.
3. Renewable Energy Systems: Utilized in solar inverters and battery management systems.
4. Automotive Systems: Applied in electric and hybrid vehicles for powertrain and auxiliary systems.
5. Consumer Electronics: Used in devices requiring efficient power management such as laptops and gaming consoles.
These applications leverage the MOSFET's efficiency, low on-resistance, and high-speed switching capabilities.

Package

The IRF7759L2TRPBF is supplied in a D2PAK (TO-263) package. This package type is designed for surface mounting and is commonly used for power MOSFETs, providing efficient thermal management and reduced space on PCBs.

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